US2011240957A1PendingUtilityA1

Group lll nitride semiconductor light-emitting device

Assignee: TOYODA GOSEI KKPriority: Mar 31, 2010Filed: Mar 30, 2011Published: Oct 6, 2011

Est. expiryMar 31, 2030(~3.7 yrs left)· nominal 20-yr term from priority

Inventors:Koji Okuno Atsushi Miyazaki

H10H 20/825H10H 20/811H10H 20/812

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References

Claims

Abstract

The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved emission performance without increasing driving voltage. The Group III nitride semiconductor light-emitting device includes at least an n-type-layer-side cladding layer, a light-emitting layer, and a p-type-layer-side cladding layer, each of the layers being formed of a Group III nitride semiconductor. The n-type-layer-side cladding layer is a superlattice layer having a periodic structure including an In y Ga 1-y N (0<y<1) layer, an Al x Ga 1-x N (0<x<1) layer, and a GaN layer. The Al x Ga 1-x N (0<x<1) layer has such a thickness that electrons tunnel through the Al x Ga 1-x N layer and holes are confined in the light-emitting layer.

Claims

exact text as granted — not AI-modified

1 . A Group III nitride semiconductor light-emitting device comprising at least an n-type-layer-side cladding layer, a light-emitting layer, and a p-type-layer-side cladding layer, each of the layers being formed of a Group III nitride semiconductor, wherein the n-type-layer-side cladding layer is a superlattice layer having a periodic structure including an In y Ga 1-y N (0&lt;y&lt;1) layer, an Al x Ga 1-x N (0&lt;x&lt;1) layer, and a GaN layer. 
     
     
         2 . A Group III nitride semiconductor light-emitting device according to  claim 1 , wherein the Al x Ga 1-x N (0&lt;x&lt;1) layer has such a thickness that electrons tunnel through the Al x Ga 1-x N layer and holes are confined in the light-emitting layer. 
     
     
         3 . A Group III nitride semiconductor light-emitting device according to  claim 2 , wherein the Al x Ga 1-x N (0&lt;x&lt;1) layer has a thickness of 0.3 nm to 2.5 nm. 
     
     
         4 . A Group III nitride semiconductor light-emitting device according to  claim 2 , wherein the Al x Ga 1-x N (0&lt;x&lt;1) layer has an Al compositional proportion x of 0.05 or more and less than 1. 
     
     
         5 . A Group III nitride semiconductor light-emitting device according to  claim 1 , wherein the p-type-layer-side cladding layer is formed of a superlattice layer including an Al z Ga 1-z N (0&lt;z&lt;1) layer, and the Al x Ga 1-x N (0&lt;x&lt;1) layer of the n-type-layer-side cladding layer has a compositional proportion x of ½ or more of the compositional proportion z of the Al z Ga 1-z N (0&lt;z&lt;1) layer of the p-type-layer-side cladding layer. 
     
     
         6 . A Group III nitride semiconductor light-emitting device according to  claim 1 , wherein at least one of the In y Ga 1-y N (0&lt;y&lt;1) layer, the Al x Ga 1-x N (0&lt;x&lt;1) layer, and the GaN layer, which form the n-type-layer-side cladding layer, contains Si. 
     
     
         7 . A Group III nitride semiconductor light-emitting device according to  claim 1 , wherein the light-emitting layer is formed directly on the n-type-layer-side cladding layer. 
     
     
         8 . A Group III nitride semiconductor light-emitting device according to  claim 1 , wherein the p-type-layer-side cladding layer is a superlattice layer having a periodic structure including an In w Ga 1-w N layer and an Al z Ga 1-z N (0&lt;z&lt; 1 ) layer. 
     
     
         9 . A Group III nitride semiconductor light-emitting device according to  claim 1 , wherein the n-type-layer-side cladding layer has a four-layer periodic structure including a second GaN layer interposed between the In y Ga 1-y N (0&lt;y&lt;1) layer and the Al x Ga 1-x N (0&lt;x&lt;1) layer.

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