Method of manufacturing semiconductor device

Abstract

A semiconductor device includes a semiconductor chip having a wire and a passivation film formed on the outermost surface with an opening partially exposing the wire. A resin layer is stacked on the semiconductor chip and provided with a through-hole in a position opposed to a portion of the wire facing the opening. A pad is formed on a peripheral portion of the through-hole in the resin layer and in the through-hole so that an external connection terminal is arranged on the surface thereof. The peripheral portion of the resin layer is formed more thickly than the remaining portion of the resin layer other than the peripheral portion.

1 . A method of manufacturing a semiconductor device, comprising the steps of:
 forming a first resin layer on a semiconductor chip having a passivation film formed on the outermost surface with an opening partially exposing a wire by supplying a resin material;   patterning the first resin layer so that the first resin layer selectively remains on at least a portion of the wire facing the opening;   forming a second resin layer on the semiconductor chip by supplying a resin material after patterning the first resin layer;   forming a through-hole continuously passing through the first resin layer and the second resin layer in positions of the first resin layer and the second resin layer opposed to a portion of the wire exposed from the passivation film through the opening; and   forming a pad so that an external connection terminal is arranged on the surface thereof by depositing a conductive material on a peripheral portion of the through-hole in the second resin layer and in the through-hole.   
     
     
         2 . The method according to  claim 1 , wherein the first resin layer and the second resin layer are formed to be integral with each other. 
     
     
         3 . The method according to  claim 1 , wherein the first resin layer is formed to enter the opening, and the through-hole is formed in a portion of the first resin layer entering the opening to pass through the first resin layer in the thickness direction thereof. 
     
     
         4 . The method according to  claim 1 , wherein the through-hole is smaller than the opening in a plan view. 
     
     
         5 . The method according to  claim 1 , wherein a step is formed between a top surface of the peripheral portion of the second resin layer and a top surface of a portion of the second resin layer other than the peripheral portion. 
     
     
         6 . The method according to  claim 5 , wherein the step is greater than the thickness of the portion of the second resin layer other than the peripheral portion. 
     
     
         7 . The method according to  claim 5 , wherein the step is greater than a total thickness of the first and second resin layers at the peripheral portion. 
     
     
         8 . The method according to  claim 1 , further comprising a step of arranging the external connection terminal on the surface of the pad. 
     
     
         9 . The method according to  claim 1 , wherein the first resin layer and the second resin layer are made of polyimide, polyamidimide or epoxy resin. 
     
     
         10 . A method of manufacturing a semiconductor device, comprising the steps of:
 forming a resin layer on a semiconductor chip having a passivation film formed on the outermost surface with an opening partially exposing a wire by supplying a resin material;   patterning the resin layer so that the thickness on at least a portion of the wire facing the opening is larger than the thickness of the remaining portion by forming a mask on a portion of the surface of the resin layer opposed to the opening and removing a portion of the resin layer exposed from the mask by a prescribed thickness;   removing the mask and forming a through-hole passing through the resin layer in a portion of the resin layer exposed due to the removal of the mask after patterning the resin layer; and   forming a pad so that an external connection terminal is arranged on the surface thereof by depositing a conductive material on a peripheral portion of the through-hole in the resin layer and in the through-hole.   
     
     
         11 . The method according to  claim 10 , wherein the resin layer is formed to enter the opening, and the through-hole is formed in a portion of the resin layer entering the opening to pass through the resin layer in the thickness direction thereof. 
     
     
         12 . The method according to  claim 10 , wherein the through-hole is smaller than the opening in a plan view. 
     
     
         13 . The method according to  claim 10 , wherein a step is formed between a top surface of the peripheral portion of the resin layer and a top surface of a portion of the resin layer other than the peripheral portion. 
     
     
         14 . The method according to  claim 13 , wherein the step is greater than the thickness of the portion of the resin layer other than the peripheral portion. 
     
     
         15 . The method according to  claim 13 , wherein the step is greater than the thickness of the resin layer at the peripheral portion. 
     
     
         16 . The method according to  claim 10 , further comprising a step of arranging the external connection terminal on the surface of the pad. 
     
     
         17 . The method according to  claim 10 , wherein the resin layer is made of polyimide, polyamidimide or epoxy resin. 
     
     
         18 . The method according to  claim 10 , wherein forming the mask includes a photolithography process using a reticle, and forming the pad includes a photolithography process using the same reticle. 
     
     
         19 . A method of manufacturing a semiconductor device, comprising the steps of:
 forming a resin layer stacked on a semiconductor chip having a passivation film formed on the outermost surface with an opening partially exposing a wire by supplying a resin material;   forming a through-hole passing through the resin layer in a position of the resin layer opposed to a portion of the wire exposed from the passivation film through the opening; and   forming a pad by depositing a conductive material on a peripheral portion of the through-hole in the resin layer and in the through-hole, wherein   the resin layer is formed such that the peripheral portion of the resin layer is thicker than the remaining portion of the resin layer other than the peripheral portion.   
     
     
         20 . The method according to  claim 19 , wherein the resin layer is formed to enter the opening, and the through-hole is formed in a portion of the resin layer entering the opening to pass through the resin layer in the thickness direction thereof. 
     
     
         21 . The method according to  claim 19 , wherein the through-hole is smaller than the opening in a plan view. 
     
     
         22 . The method according to  claim 19 , wherein a step is formed between a top surface of the peripheral portion of the resin layer and a top surface of a portion of the resin layer other than the peripheral portion. 
     
     
         23 . The method according to  claim 22 , wherein the step is greater than the thickness of the portion of the resin layer other than the peripheral portion. 
     
     
         24 . The method according to  claim 22 , wherein the step is greater than the thickness of the resin layer at the peripheral portion. 
     
     
         25 . The method according to  claim 19 , further comprising a step of arranging an external connection terminal on the surface of the pad. 
     
     
         26 . The method according to  claim 19 , wherein the resin layer is made of polyimide, polyamidimide or epoxy resin.