Method of manufacturing semiconductor device

Abstract

In a dry cleaning process, breakage of a gas supply pipe can be prevented, and maintenance efficiency can be increased. There is provided a substrate processing apparatus comprising: a process chamber configured to process a substrate; a heater configured to heat an inside of the process chamber; a gas supply pipe installed in the process chamber; a gas supply system configured to supply at least a cleaning gas to the gas supply pipe to introduce the cleaning gas into the process chamber; and a control unit configured to control the heater and gas supply system with the substrate unloaded from the process chamber to perform heating an inside of the process chamber to generate a crack in a thin film formed inside the process chamber; decreasing an inside temperature of the process chamber after the crack is generated in the thin film; and introducing the cleaning gas into the process chamber by supplying the cleaning gas to the gas supply pipe after the inside temperature of the process chamber is decreased.

1 . A substrate processing apparatus comprising:
 a process chamber configured to process a substrate;   a heater configured to heat an inside of the process chamber;   a gas supply pipe installed in the process chamber;   a gas supply system configured to supply at least a cleaning gas to the gas supply pipe to introduce the cleaning gas into the process chamber; and   a control unit configured to control the heater and gas supply system with the substrate unloaded from the process chamber to perform heating an inside of the process chamber to generate a crack in a thin film formed inside the process chamber;   decreasing an inside temperature of the process chamber after the crack is generated in the thin film; and   introducing the cleaning gas into the process chamber by supplying the cleaning gas to the gas supply pipe after the inside temperature of the process chamber is decreased.   
     
     
         2 . The apparatus of  claim 1 , further comprising:
 a temperature sensor for sensing the inside temperature of the process chamber,
 wherein the control unit performs decreasing the inside temperature of the process chamber when the inside temperature of the process chamber sensed by the temperature sensor ranges from 600° C. to 900° C., and performs introducing the cleaning gas into the process chamber when the inside temperature of the process chamber sensed by the temperature sensor ranges from 350° C. to 550° C.