Crystallization apparatus, crystallization method, method of manufacturing thin film transistor and method of manufacturing organic light emitting display apparatus

Abstract

Provided are a crystallization apparatus and method, which prevent cracks from being generated, a method of manufacturing a thin film transistor (TFT), and a method of manufacturing an organic light emitting display apparatus. The crystallization apparatus includes a chamber for receiving a substrate, a first flash lamp and a second flash lamp, which are disposed facing each other within the chamber, wherein amorphous silicon layers are disposed on a first surface of the substrate facing the first flash lamp and a second surface of the substrate facing the second flash lamp, respectively.

1 . A crystallization apparatus, comprising:
 a chamber for receiving a substrate; and   a first flash lamp and a second flash lamp, which are disposed facing each other within the chamber,   wherein amorphous silicon layers are disposed on a first surface of the substrate facing the first flash lamp and a second surface of the substrate facing the second flash lamp, respectively.   
     
     
         2 . The crystallization apparatus of  claim 1 , wherein the amorphous silicon layer disposed on the first surface is crystallized by light irradiated from the first flash lamp, and the amorphous silicon layer disposed on the second surface is crystallized by light irradiated from the second flash lamp. 
     
     
         3 . The crystallization apparatus of  claim 1 , wherein two substrates are provided within the chamber,
 the amorphous silicon layer is disposed on a first surface which faces the first flash lamp of the substrate disposed facing the first flash lamp, and   the amorphous silicon layer is disposed on a second surface which faces the second flash lamp of the substrate disposed facing the second flash lamp.   
     
     
         4 . The crystallization apparatus of  claim 1 , wherein the amorphous silicon layer disposed on the first surface and the amorphous silicon layer disposed on the second surface are crystallized simultaneously. 
     
     
         5 . The crystallization apparatus of  claim 1 , wherein the flash lamp comprises one selected from the group consisting of a xenon lamp, a xenon-mercury lamp, a krypton lamp, a krypton-mercury lamp, a xenon-krypton lamp, a xenon-krypton-mercury lamp, and a metal halide lamp. 
     
     
         6 . The crystallization apparatus of  claim 1 , wherein the flash lamp is controlled with respect to a peak value and a pulse width of a discharge current applied thereto and a repetition speed and frequency of lamp light emission. 
     
     
         7 . A crystallization method, comprising:
 providing a work piece in a crystallization chamber, the work piece comprising a substrate, a first amorphous silicon layer on a first surface of the substrate and a second amorphous silicon layer on a second surface of the substrate, wherein the first and second surfaces face away from each other;   irradiating a first light beam to the first amorphous silicon layer for at least partially crystallizing the first amorphous silicon layer;   concurrently irradiating a second light beam to the second amorphous silicon layer for at least partially crystallizing the second amorphous silicon layer.   
     
     
         8 . The crystallization method of  claim 7 , wherein the crystallization chamber comprises a first flash lamp facing the first surface of the substrate and a second flash lamp facing the second surface of the substrate. 
     
     
         9 . The crystallization method of  claim 7 , wherein the substrate comprises a first plate and a second plate, wherein the first surface is a surface of the first plate and the second surface is a surface of the second plate. 
     
     
         10 . The crystallization method of  claim 9 , further comprising separating the two plates from each other after the amorphous silicon layers are crystallized. 
     
     
         11 . The crystallization method of  claim 7 , further comprising removing at least one of the crystallized silicon layers from the substrate. 
     
     
         12 . The crystallization method of  claim 7 , further comprising dividing the substrate into two parts along a surface parallel to the first surface and the second surface after the amorphous silicon layers are crystallized. 
     
     
         13 . A method of manufacturing a thin film transistor (TFT), the method comprising:
 forming an active layer on a substrate;   forming a gate electrode insulated from the active layer; and   forming a source electrode and a drain electrode, which are electrically connected to the active layer,   wherein the forming of the active layer comprises using the crystallization method of  claim 7 .   
     
     
         14 . A method of manufacturing an organic light emitting display apparatus, the method comprising:
 forming a thin film transistor (TFT); and   forming an organic light emitting device electrically connected to the TFT,   wherein the forming of the TFT comprises:   forming an active layer on a substrate;   forming a gate electrode insulated from the active layer; and   forming a source electrode and a drain electrode, which are electrically connected to the active layer,   wherein the forming of the active layer comprises using the crystallization method of  claim 7 .   
     
     
         15 . A crystallization apparatus, comprising:
 a first array of lights configured to irradiate light beams in directions that commonly have a component of a first direction; and   a second array of lights configured to irradiate light beams in directions that commonly have a component of a second direction that is opposite to the first direction.   
     
     
         16 . The apparatus of  claim 15 , wherein the first array of lights comprises a first flash lamp, and the second array of lights comprises a second flash lamp. 
     
     
         17 . The apparatus of  claim 15 , wherein the first and second flash lamps each comprises at least one selected from the group consisting of a xenon lamp, a xenon-mercury lamp, a krypton lamp, a krypton-mercury lamp, a xenon-krypton lamp, a xenon-krypton-mercury lamp, and a metal halide lamp. 
     
     
         18 . The apparatus of  claim 15 , wherein each of the first and second flash lamps is controlled with respect to a peak value and a pulse width of a discharge current applied thereto and a repetition speed and frequency of lamp light emission.