Compound semiconductor light-emitting device and method for manufacturing the same

Abstract

A compound semiconductor light-emitting device which includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, that are made of a compound semiconductor, formed on a substrate, the n-type semiconductor layer and the p-type semiconductor layer are stacked so as to interpose the light-emitting layer therebetween, a first conductive transparent electrode and a second conductive electrode. The first conductive transparent electrode is made of an IZO film containing an In 2 O 3 crystal having a bixbyite structure. Also discussed is a method of manufacturing the device.

1 . A compound semiconductor light-emitting device comprising:
 an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, that are made of a gallium nitride-based compound semiconductor, formed on a substrate, the n-type semiconductor layer and the p-type semiconductor layer being stacked so as to interpose the light-emitting layer therebetween, a first conductive transparent electrode formed on the p-type semiconductor layer and a second conductive electrode formed on the n-type semiconductor layer,   wherein the first conductive transparent electrode is made of an IZO film which contains an In 2 O 3  crystal having a bixbyite structure, and the IZO film has a sheet resistance of less than 15 Ω/sq.   
     
     
         2 . The compound semiconductor light-emitting device according to  claim 1 , wherein a ZnO content in the IZO film is from 1% to 20% by mass. 
     
     
         3 . The compound semiconductor light-emitting device according to  claim 1 , wherein a thickness of the IZO film is from 35 nm to 10 μm. 
     
     
         4 . The compound semiconductor light-emitting device according to  claim 1 , wherein a surface of the IZO film is uneven. 
     
     
         5 . The compound semiconductor light-emitting device according to  claim 4 , wherein a plurality of independent recesses is formed on the surface of the IZO film. 
     
     
         6 . The compound semiconductor light-emitting device according to  claim 4 , wherein a total area of the recesses accounts for ¼ to ¾ of an entire IZO film. 
     
     
         7 . The compound semiconductor light-emitting device according to  claim 4 , wherein the thickness of the IZO film in the recesses accounts for ½ or less of the thickness of the IZO film in protrusions.