Storage capacitor having an increased aperture ratio and method of manufacturing the same

Abstract

Disclosed is a method of manufacturing a storage capacitor having increased aperture ratio: providing a substrate having a metal layer disposed thereon, and said metal layer is covered correspondingly with a first dielectric layer and a second dielectric layer in sequence; forming a photoresist layer with a uniform thickness to cover said second dielectric layer; performing a process of exposure-to-light and development to a portion of said photoresist layer that is correspondingly disposed over said metal layer sequentially, so that its thickness is less than its original thickness; removing said photoresist layer and etching said portion of said second dielectric layer, so that a thickness of said portion of said second dielectric layer is less than its original thickness, and the etching depth of said portion is greater than that of the other remaining portions of said second dielectric layer; and forming an electrode layer on said second dielectric layer.

1 . A method of manufacturing a storage capacitor having an increased aperture ratio, which is formed simultaneously with a thin-film-transistor, comprising the following steps of:
 providing a substrate having a metal layer disposed thereon, and said metal layer is covered correspondingly with a first dielectric layer and a second dielectric layer in sequence;   forming a photoresist layer with a uniform thickness to cover said second dielectric layer;   performing a process of exposure-to-light and development to said photoresist layer sequentially, so that said uniform thickness of said photoresist layer is less than its original thickness after said process;   removing said photoresist layer and etching a portion of said second dielectric layer that is correspondingly disposed over said metal layer, wherein said thickness of said portion of said second dielectric layer is less than its original thickness after etching, and an etching depth of said portion is greater than said etching depth of said other remaining portions of said second dielectric layer; and   forming an electrode layer on said second dielectric layer.   
     
     
         2 . The method of manufacturing a storage capacitor having an increased aperture ratio according to  claim 1 , wherein
 said exposure-to-light process further includes exposing said photoresist layer to light by means of a mask.   
     
     
         3 . The method of manufacturing a storage capacitor having an increased aperture ratio according to  claim 2 , wherein
 said mask is composed of a plurality of opaque first block patterns and an opaque second block pattern in a perimeter of said first block patterns, wherein a distance between said respective first block patterns is ranged from 0 to 4 μm.   
     
     
         4 . The method of manufacturing a storage capacitor having an increased aperture ratio according to  claim 3 , wherein
 said distance between said second block pattern and said first block patterns nearest to said second block pattern is less than 4 μm.   
     
     
         5 . The method of manufacturing a storage capacitor having an increased aperture ratio according to  claim 3 , wherein
 said first block patterns of said mask are aligned to said portion of said photoresist layer that is correspondingly disposed over said metal layer in said process of exposure-to-light, and said second block pattern is aligned to said other remaining portions of said photoresist layer.   
     
     
         6 . The method of manufacturing a storage capacitor having an increased aperture ratio according to  claim 1 , wherein
 said etching process includes a dry anisotropic etching.   
     
     
         7 . The method of manufacturing a storage capacitor having an increased aperture ratio according to  claim 3 , wherein
 said first block patterns and said second block pattern are made of chromium.   
     
     
         8 . The method of manufacturing a storage capacitor having an increased aperture ratio according to  claim 1 , wherein
 said first dielectric layer and said second dielectric layer are made of silicon nitride.   
     
     
         9 . The method of manufacturing a storage capacitor having an increased aperture ratio according to  claim 1 , wherein
 said electrode layer is a transparent metal electrode layer.   
     
     
         10 . The method of manufacturing a storage capacitor having an increased aperture ratio according to  claim 9 , wherein
 said transparent metal electrode layer is made of indium-tin-oxide (ITO).   
     
     
         11 . The method of manufacturing a storage capacitor having an increased aperture ratio according to  claim 1 , wherein
 said substrate is a glass substrate.