US2011215481A1PendingUtilityA1

Semiconductor device

45
Assignee: PANASONIC CORPPriority: Aug 9, 2005Filed: May 12, 2011Published: Sep 8, 2011
Est. expiryAug 9, 2025(expired)· nominal 20-yr term from priority
Inventors:Noriyuki NagaiToshihiko Sakashita
H10W 74/129H10W 72/5525H10W 72/952H10W 72/932H10W 72/923H10W 72/536H10W 72/252H10W 72/251H10W 72/59H10W 72/29H10W 70/60H10W 72/20
45
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Claims

Abstract

In a semiconductor device, a pad metal has at least a portion located immediately under a probe region, and the portion is divided into a plurality of narrow metal layers each arranged in parallel with a traveling direction of a probe. Thus, it is possible to enhance surface flatness of the pad metal and to prevent a characteristic of a semiconductor device from deteriorating without complication in processing and increase in chip size.

Claims

exact text as granted — not AI-modified
1 .- 18 . (canceled) 
     
     
         19 . A semiconductor device comprising:
 an electrode pad region having an electrode pad formed thereon and serving as an external terminal for proving;   an active region having an internal circuit formed therein;   a plurality of metal wires located under the electrode pad; and   a via for electrically connecting between the electrode pad and one of the metal wires,   wherein a slit is between the metal wires, the slit extends in a direction from the electrode pad region to the active region, and the via extends in a direction perpendicular to the slit.   
     
     
         20 . The semiconductor device according to  claim 19 , wherein the electrode pad has a probe region, and the via is formed outside the probe region. 
     
     
         21 . The semiconductor device according to  claim 19 , wherein an interlayer film is located on the metal wires, the electrode pad is located on the interlayer film, and the via penetrates through the interlayer film. 
     
     
         22 . The semiconductor device according to  claim 19 , wherein a shield wire around the active region, and the shield wire extends in a direction perpendicular to the slit. 
     
     
         23 . The semiconductor device according to  claim 21 , wherein the interlayer film is a SiN layer. 
     
     
         24 . The semiconductor device according to  claim 20 , wherein the slit is formed in the portion under the probe region. 
     
     
         25 . The semiconductor device according to  claim 19 , wherein the metal wires have a width of not larger than 20 μm. 
     
     
         26 . The semiconductor device according to  claim 19 , wherein the metal wires are made of Cu. 
     
     
         27 . The semiconductor device according to  claim 19 , wherein the electrode pad is made of Al.

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