Through Silicon via Bridge Interconnect

Abstract

An integrated circuit bridge interconnect device includes a first die and a second die provided in a side-by-side configuration and electrically interconnected to each other by a bridge die. The bridge die includes through silicon vias (TSVs) to connect conductive interconnect lines on the bridge die to the first die and the second die. Active circuitry, other than interconnect lines, may be provided on the bridge die. At least one or more additional die may be stacked on the bridge die and interconnected to the bridge die.

1 . A bridge die, comprising:
 through vias; and   a conductive layer coupled to the through vias, the conductive layer and the through vias electrically coupling a first die to a second die.   
     
     
         2 . The die of  claim 1 , in which the through vias extend from a first side of the bridge die to a second side of the bridge die, the through vias being filled with conductive material to couple conductive lines on the first side of the bridge die to enable the interconnecting. 
     
     
         3 . The die of  claim 2 , further comprises active circuitry on the first side. 
     
     
         4 . The die of  claim 2 , further comprising at least one contact pad on the second side of the bridge die corresponding to at least one contact pad on first sides of the first and second die. 
     
     
         5 . The die of  claim 2 , in which at least one of the first and second dies comprise:
 a flip-chip die having circuitry disposed on a second side; and   flip-chip through vias from a first side of the flip-chip die to the second side of the flip-chip die, the flip-chip through vias being filled with conductive material to couple active circuitry on the second side of the flip-chip die to at least one contact pad on the first side of the flip-chip die.   
     
     
         6 . The die of  claim 2 , in which at least one of the first and second dies comprises circuitry disposed on a first side of the first and second die. 
     
     
         7 . The die of  claim 2 , further comprising:
 contacts operable to couple to at least one additional die stacked on the bridge die, the at least one additional die further comprising at least one of passive, active and interconnect circuitry.   
     
     
         8 . The die of  claim 1 , fabricated using a process flow that is different from a process flow corresponding to at least one of the first and the second dies. 
     
     
         9 . The die of  claim 1 , integrated into at least one of a cell phone, hand-held personal communication systems (PCS) units, portable data unit, and fixed location data unit. 
     
     
         10 . An integrated circuit package comprising:
 a first die disposed on a substrate;   a second die disposed on the substrate; and   a bridge die interconnecting the first die to the second die, the bridge die comprising conductive through vias coupled to conductive lines on a first side of the bridge die to enable the interconnecting.   
     
     
         11 . The package of  claim 10 , in which the bridge die is disposed at least partially on first sides of the first die and the second die. 
     
     
         12 . The package of  claim 10 , in which the bridge die further comprises active circuitry on the first side. 
     
     
         13 . The package of  claim 10 , further comprising a plurality of contact pads on the second side of the bridge die contacting corresponding contact pads on first sides of the first and second dies. 
     
     
         14 . The package of  claim 10 , in which at least one of the first and second die comprise:
 a flip-chip die having circuitry disposed on a second side, the flip-chip die being coupled to the substrate by ball bonding, solder bump bonding or conductive paste; and   flip-chip through vias extending from the first side to the second side of the flip-chip die;   the flip-chip through vias being filled with conductive material to couple conductive lines on the second side to at least one contact pad on the first side of the flip-chip die.   
     
     
         15 . The package of  claim 10 , in which at least one of the first and second die comprise circuitry disposed on the first side of the first and second die. 
     
     
         16 . The package of  claim 10 , further comprising:
 at least one additional die stacked on the bridge die, the at least one additional die further comprising at least one of passive, active and interconnect circuitry.   
     
     
         17 . The package of  claim 10 , in which the bridge die is fabricated using a process flow that is different from a process flow corresponding to at least one of the first and the second dies. 
     
     
         18 . The package of  claim 10 , integrated into at least one of a cell phone, hand-held personal communication systems (PCS) units, and portable data unit, and fixed location data unit. 
     
     
         19 . An integrated circuit package comprising:
 a first die disposed on a substrate;   a second die disposed on the substrate; and   means for interconnecting the first die to the second die, the interconnecting means comprising conductive through vias coupled to conductive lines on a first side of the interconnecting means to enable the interconnecting.   
     
     
         20 . The package of  claim 19 , integrated into at least one of a cell phone, hand-held personal communication systems (PCS) units, and portable data unit, and fixed location data unit.