Carbon nanotube n-doping material, carbon nanotube n-doping method and device using the same

Abstract

Nicotinamide and/or a compound which is chemically combined with nicotinamide may be used as a carbon nanotube (“CNT”) n-doping material. CNTs n-doped with the CNT n-doping material may have long-lasting doping stability in the air without de-doping. Further, CNT n-doping state may be easily controlled when using the CNT n-doping material. The CNT n-doping material and/or CNTs n-doped with the CNT n-doping material may be used for various applications.

1 .- 19 . (canceled) 
     
     
         20 . A device comprising: a CNT n-doped with a material comprising nicotinamide or a compound which is chemically combined with the nicotinamide. 
     
     
         21 . The device according to  claim 20 , wherein the compound which is chemically combined with nicotinamide is at least one selected from the group consisting of nicotinamide mononucleotide (NMN), a nicotinamide adenine dinucleotide (NAD), a nicotinamide adenine dinucleotide phosphate (NADP), reduced nicotinamide mononucleotide (NMNH), a reduced nicotinamide adenine dinucleotide (NADH) and a reduced nicotinamide adenine dinucleotide phosphate (NADPH). 
     
     
         22 . The device according to  claim 20 , wherein the device is a field-effect transistor. 
     
     
         23 . The device according to  claim 20 , wherein the device is a p-n junction diode. 
     
     
         24 . The device according to  claim 20 , wherein the device is a complementary metal oxide semiconductor (CMOS). 
     
     
         25 . The device according to  claim 22 , wherein the field-effect transistor comprises
 a gate;   a source electrode and a drain electrode on the gate; and   a CNT channel between the source electrode and the drain electrode.   
     
     
         26 . The device according to  claim 25 , wherein a portion of the CNT channel close to the drain electrode comprises a CNT n-doped with a material comprising nicotinamide or a compound which is chemically combined with the nicotinamide. 
     
     
         27 . The device according to  claim 26 , wherein the field-effect transistor further comprises a photoresist layer on the remaining portion of the CNT channel close to the source electrode. 
     
     
         28 . The device according to  claim 23 , wherein the p-n junction diode comprises
 a substrate;   a first electrode and a second electrode on the substrate; and   a CNT channel formed between the first electrode and the second electrode.   
     
     
         29 . The device according to  claim 28 , wherein a half of the CNT channel comprises a CNT n-doped with a material comprising nicotinamide or a compound which is chemically combined with the nicotinamide. 
     
     
         30 . The device according to  claim 29 , the p-n junction diode further comprises a photoresist layer which protects the remaining half of the CNT channel from the n-doping. 
     
     
         31 . The device according to  claim 24 , wherein the complementary metal oxide semiconductor (CMOS) comprises
 a gate;   a p-type transistor and an n-type transistor on the gate; and   CNT channels formed between electrodes at the p-type transistor and the n-type transistor.   
     
     
         32 . The device according to  claim 31 , wherein the CNT channel formed between electrodes at the n-type transistor comprises a CNT n-doped with a material comprising nicotinamide or a compound which is chemically combined with the nicotinamide.