Semiconductor light emitting element and method for manufacturing same

Abstract

According to one embodiment, a semiconductor light emitting element includes a conductive substrate, a bonding portion, an intermediate metal film, a first electrode, a semiconductor stacked body and a second electrode. The bonding portion is provided on the support substrate and including a first metal film. The intermediate metal film is provided on the bonding portion and having a larger linear expansion coefficient than the first metal film. The first electrode is provided on the intermediate metal film and includes a second metal film having a larger linear expansion coefficient than the intermediate metal film. The semiconductor stacked body is provided on the first electrode and including a light emitting portion. The second electrode is provided on the semiconductor stacked body.

1 . A semiconductor light emitting element comprising:
 a conductive substrate;   a bonding portion provided on the conductive substrate and including a first metal film;   an intermediate metal film provided on the bonding portion and having a larger linear expansion coefficient than the first metal film;   a first electrode provided on the intermediate metal film and including a second metal film having a larger linear expansion coefficient than the intermediate metal film;   a semiconductor stacked body provided on the first electrode and including a light emitting portion; and   a second electrode provided on the semiconductor stacked body.   
     
     
         2 . The element according to  claim 1 , wherein
 the first electrode further includes a third metal film provided between the semiconductor stacked body and the second metal film, and   the intermediate metal film has a larger film thickness than the third metal film.   
     
     
         3 . The element according to  claim 1 , wherein the intermediate metal film is made of one selected from Ni, Pt, Rh, and Pd. 
     
     
         4 . The element according to  claim 1 , wherein the bonding portion is a metal multilayer film including the first metal film. 
     
     
         5 . The element according to  claim 1 , wherein the first metal film is made of Ni. 
     
     
         6 . The element according to  claim 1 , wherein the intermediate metal film is provided between the first metal film and the second metal film. 
     
     
         7 . The element according to  claim 1 , wherein the second metal film is made of Ag. 
     
     
         8 . The element according to  claim 1 , wherein the bonding portion includes a fourth metal film being in contact with at least an end surface of the first electrode and being resistant to etching for the semiconductor stacked body. 
     
     
         9 . The element according to  claim 8 , wherein the bonding portion is a metal multilayer film including the first metal film. 
     
     
         10 . A method for manufacturing a semiconductor light emitting element, comprising:
 forming a semiconductor stacked body including a light emitting portion on a growth substrate;   forming an electrode including a first metal film on the semiconductor stacked body;   forming an intermediate metal film on the electrode, the intermediate metal film having a smaller linear expansion coefficient than the first metal film;   forming a bonding portion on the intermediate metal film, the bonding portion including a second metal film having a smaller linear expansion coefficient than the intermediate metal film;   bonding a support substrate via the bonding portion; and   removing the growth substrate from the semiconductor stacked body by irradiation with laser light from a surface of the growth substrate on opposite side from the semiconductor stacked body.   
     
     
         11 . The method according to  claim 10 , wherein the intermediate metal film is made of one selected from Ni, Pt, Rh, and Pd. 
     
     
         12 . The method according to  claim 10 , wherein the bonding portion is a metal multilayer film including the first metal film. 
     
     
         13 . The method according to  claim 10 , wherein the first metal film is made of Ni. 
     
     
         14 . The method according to  claim 10 , wherein the second metal film is made of Ag. 
     
     
         15 . A method for manufacturing a semiconductor light emitting element, comprising:
 forming a semiconductor stacked body including a light emitting portion on a growth substrate;   forming an electrode including a first metal film on the semiconductor stacked body;   forming an intermediate metal film on the electrode, the intermediate metal film having a smaller linear expansion coefficient than the first metal film;   selectively etching and dividing the electrode and the intermediate metal film, and forming a bonding portion so as to cover each of the electrode and the intermediate metal film, the bonding portion including a second metal film having a smaller linear expansion coefficient than the intermediate metal film;   bonding a support substrate via the bonding portion;   removing the growth substrate from the semiconductor stacked body by irradiation with laser light from a surface of the growth substrate on opposite side from the semiconductor stacked body; and   etching the semiconductor stacked body using the bonding portion as a stopper.   
     
     
         16 . The method according to  claim 15 , wherein the intermediate metal film is made of one selected from Ni, Pt, Rh, and Pd. 
     
     
         17 . The method according to  claim 15 , wherein the bonding portion is a metal multilayer film including the first metal film. 
     
     
         18 . The method according to  claim 15 , wherein the first metal film is made of Ni. 
     
     
         19 . The method according to  claim 15 , wherein the second metal film is made of Ag.