Metallocenyl dendrimer, organic memory device using the same and fabrication method of the organic memory device

Abstract

Disclosed are a metallocenyl dendrimer, an organic memory device using the metallocenyl dendrimer and a method for fabricating the organic memory device. The metallocenyl dendrimer may be composed of a dendrimer and metallocenes as redox species linked to the dendrimer. The organic memory device may possess the advantages of shorter switching time, decreased operating voltage, decreased fabrication costs and increased reliability. Based on these advantages, the organic memory device may be used as a highly integrated, large-capacity memory device.

1 . A metallocenyl dendrimer represented by Formula 1: 
       
         
           
           
               
               
           
         
       
       wherein R 1 , R 2 , R 3 , R 4 , R 5  and R 6 , which is identical to or different from each other, are independently H, a C 1 -C 20  alkyl group, a C 1 -C 20  alkoxy group, a C 3 -C 20  cycloalkyl group, a C 3 -C 20  heterocycloalkyl group, a C 5 -C 30  aryl group, a C 5 -C 30  heteroaryl group, a C 7 -C 30  arylalkyl group, or a C 5 -C 30  aryloxy group; Z 1 , Z 2  and Z 3 , which is identical to or different from each other, are independently a single bond, —C═C—, —(CH 2 ) n  (in which n is from about 1 to about 20), or a carbonyl group; and M is Fe, Ru, Zr or Ti. 
     
     
         2 . The metallocenyl dendrimer according to  claim 1 , wherein the metallocenyl dendrimer is the compound represented by Formula 2 or 3: