Method of manufacturing a semiconductor device

Abstract

Provided is a technology capable of improving a production yield of a semiconductor device having, for example, IGBG as a semiconductor element. After formation of an interconnect on the surface side of a semiconductor substrate, a supporting substrate covering the interconnect is bonded onto the interconnect. Then, a BG tape is overlapped and bonded onto the supporting substrate and the semiconductor substrate is ground from the backside. The BG tape is then peeled off and an impurity is introduced into the backside of the semiconductor substrate by ion implantation. Then, the supporting substrate is peeled off, followed by heat treatment of the semiconductor substrate.

1 . A method of manufacturing a semiconductor device, comprising the steps of:
 (a) forming a semiconductor element on a first surface of a semiconductor substrate;   (b) after covering the semiconductor element with a protective film, attaching a reinforcing plate over the protective film;   (c) after the step (b), forming a first semiconductor region by implanting first impurity ions from a second surface which is opposite to the first surface of the semiconductor substrate; and   (d) after the step (c), peeling off the reinforcing plate from the first surface of the semiconductor substrate.   
     
     
         2 . The method of manufacturing a semiconductor device according to  claim 1 , wherein the reinforcing plate is a quartz glass or ceramic plate. 
     
     
         3 . The method of manufacturing a semiconductor device according to  claim 1 , further comprising the step of:
 (e) after the step (d), depositing a nickel film over the second surface of the semiconductor substrate.   
     
     
         4 . A method of manufacturing a semiconductor device, comprising the steps of:
 (a) forming a semiconductor element on a first surface of a semiconductor substrate;   (b) after covering the semiconductor element with a protective film, attaching a reinforcing plate over the protective film;   (c) after the step (b), grinding the semiconductor substrate from the second surface to adjust the thickness of the semiconductor substrate,   (d) after the step (c), forming a first semiconductor region by implanting first impurity ions from a second surface which is opposite to the first surface of the semiconductor substrate; and   (e) after the step (d), peeling off the reinforcing plate from the first surface of the semiconductor substrate.   
     
     
         5 . The method of manufacturing a semiconductor device according to  claim 4 , wherein the reinforcing plate is a quartz glass or ceramic plate. 
     
     
         6 . The method of manufacturing a semiconductor device according to  claim 4 , further comprising the step of:
 (f) after the step (e), depositing a nickel film over the second surface of the semiconductor substrate.