Light emitting diode packages, light emitting diode systems and methods of manufacturing the same

Abstract

In a method of forming an LED semiconductor device, and in an LED semiconductor device, an LED is provided on a substrate. A first encapsulant material layer is provided on the LED, and the first encapsulant material layer is firstly annealed. A luminescence conversion material layer is provided on the firstly annealed first encapsulant material layer, and the first encapsulant material layer and the luminescence conversion material layer and secondly annealed.

1 . An LED semiconductor device comprising:
 an LED on a substrate;   a first encapsulant material layer on the LED; and   a luminescence conversion material layer consisting essentially of a luminescence conversion material on the first encapsulant material layer, the luminescence conversion material layer being of a thickness that is selected to determine a resultant transmittance of optical energy that is emitted from the LED.   
     
     
         2 . The device of  claim 1 :
 wherein the first encapsulant material layer is first annealed under first process conditions to have a first hardness prior to application of the luminescence conversion material layer and wherein the thickness of the luminescence conversion material layer is determined as a result of the first hardness; and   wherein the first encapsulant material layer and the luminescence conversion material layer are second annealed under second process conditions, that are independent of the first process conditions.   
     
     
         3 . The device of  claim 2  wherein the first process conditions of the first annealing result in a soft curing of the first encapsulant material layer and wherein the second process conditions of the second annealing result in a hard curing of the first encapsulant material layer. 
     
     
         4 . The device of  claim 2  wherein the thickness of the luminescence conversion material layer is determined by controlling process conditions of the first annealing of the first encapsulant material layer. 
     
     
         5 . The device of  claim 1  wherein the thickness of the luminescence conversion material layer is determined by applying a physical pressure to the first encapsulant material layer. 
     
     
         6 . The device of  claim 1  further comprising a second encapsulant material layer on the luminescence conversion material layer. 
     
     
         7 . The device of  claim 6  wherein the second encapsulant material layer is substantially transparent to optical energy at wavelengths emitted by the LED. 
     
     
         8 . The device of  claim 1  wherein the first encapsulant material layer is substantially transparent to optical energy at wavelengths emitted by the LED. 
     
     
         9 . The device of  claim 1  further comprising a filter on the luminescence conversion material layer. 
     
     
         10 . The device of  claim 1  further comprising one or more lenses on the luminescence conversion material layer. 
     
     
         11 . The device of  claim 1  wherein the first encapsulant material layer is further on the substrate. 
     
     
         12 . The device of  claim 1  wherein the first encapsulant material layer is exclusively present on the LED and not on the substrate. 
     
     
         13 . The device of  claim 12  further comprising a second encapsulation layer on the luminescence conversion material layer and on the substrate. 
     
     
         14 . The device of  claim 13  wherein the second encapsulation layer is shaped to have a convex or concave shape. 
     
     
         15 . The device of  claim 13  further comprising a filter on the second encapsulation layer. 
     
     
         16 . The device of  claim 1  wherein the luminescence conversion material comprises a phosphor material. 
     
     
         17 . The device of  claim 1  wherein the transmittance is within a range between about 5% and 10%.