Processing system and method for chemically treating a substrate

Abstract

A processing system and method for chemically treating a substrate, wherein the processing system comprises a temperature controlled chemical treatment chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, without plasma, under controlled conditions including wall temperature, surface temperature and gas pressure. The chemical treatment of the substrate chemically alters exposed surfaces on the substrate.

1 . A method of etching a substrate, comprising:
 disposing a substrate on a temperature controlled substrate holder in a temperature controlled chemical treatment chamber; and   performing a chemical treatment process in said chemical treatment chamber on said substrate to chemically alter a surface layer of said substrate to produce a non-volatile reaction product by using a non-plasma environment, said chemical treatment process comprising:   controlling a temperature of said chemical treatment chamber to within a range of about 10° C. to about 200° C.,   introducing one or more process gases to said chemical treatment chamber via a gas distribution system, at least one of said one or more process gases chemically reacting with said surface layer to produce said non-volatile reaction product, wherein said gas distribution system comprises a temperature controlled portion exposed to said one or more process gases in said chemical treatment chamber, and   controlling a temperature of said temperature controlled portion to within a range of about 10° C. to about 200° C.   
     
     
         2 . The method of  claim 1 , further comprising:
 controlling a temperature of said substrate to within a range of about 10° C. to about 50° C.   
     
     
         3 . The method of  claim 1 , wherein said one or more process gases comprises HF, or NH 3 , or both HF and NH 3    
     
     
         4 . The method of  claim 1 , further comprising:
 transferring said substrate from said chemical treatment chamber to a thermal treatment chamber; and   performing a thermal treatment process in said thermal treatment chamber to evaporate and remove said chemically altered surface layer by producing a volatile reaction product therefrom, said thermal treatment process comprising:   elevating a temperature of said substrate in excess of about 100° C.