Multi inductively coupled plasma reactor and method thereof

Abstract

Disclosed is a multi-inductively coupled plasma reactor and method thereof. In a multi-inductively coupled plasma reacting method, an etching method to increase a specific portion of a substrate to be processed includes etching a specific portion of a substrate to be processed; and depositing a passivation layer on a surface of the specific portion etched, wherein the etching and depositing steps are repeatedly proceeded, and one of both steps is executed when there is plasma formed by a central plasma source and a peripheral plasma source. According to the multi-inductively coupled plasma reactor and method thereof of the invention, it is possible that plasma is uniformly processed on the entire area of the substrate since the central plasma source and the peripheral source are provided separately. Further, it is possible to form an independent multiple plasma area without electrical interference in the plasma reactor using the interference prevention electrode grounded between the central plasma source and the peripheral plasma source. Further, the plasma formed by the central plasma source and the peripheral plasma source is used to deeply etch a specific portion of the substrate to be processed.

1 . In a multi-inductively coupled plasma reacting method, an etching method to increase a specific portion of a substrate to be processed, comprises:
 etching a specific portion of a substrate to be processed; and   depositing a passivation layer on a surface of the specific portion etched,   wherein the etching and depositing steps are repeatedly proceeded, and one of both steps is executed when there is plasma formed by a central plasma source and a peripheral plasma source.   
     
     
         2 . The multi-inductively coupled plasma reacting method according to  claim 1 , wherein both steps of etching and depositing are executed when there is plasma formed by the central plasma source and the peripheral plasma source. 
     
     
         3 . The multi-inductively coupled plasma reacting method according to  claim 1 , wherein the passivation layer of the specific portion is removed and etched again when there is plasma formed by the central plasma source and the peripheral plasma source. 
     
     
         4 . The multi-inductively coupled plasma reacting method according to  claim 2 , wherein the central plasma source and the peripheral plasma source each generate plasma using an inductive coupling method. 
     
     
         5 . The multi-inductively coupled plasma reacting method according to  claim 2 , wherein the central plasma source generates plasma using a capacitive coupling method and the peripheral plasma source generates plasma using an inductive coupling method. 
     
     
         6 . A multi-inductively coupled plasma reactor, comprising:
 an reactor body that internally includes a substrate support to support a substrate to be processed;   a central plasma source that generates plasma in a central area of the reactor body; and   a peripheral plasma source that generates plasma in a peripheral area of the reactor body,   wherein an etching and a deposition of a passivation layer with respect to a specific portion of the substrate to be processed are repeatedly performed.   
     
     
         7 . The multi-inductively coupled plasma reactor according to  claim 6 , wherein the central plasma source and the peripheral plasma source each generate plasma using an inductive coupling method. 
     
     
         8 . The multi-inductively coupled plasma reactor according to  claim 6 , wherein the central plasma source generates plasma using a capacitive coupling method and the peripheral plasma source generates plasma using an inductive coupling method. 
     
     
         9 . The multi-inductively coupled plasma reactor according to  claim 6 , wherein the central plasma source and the peripheral plasma source are arranged differently from the substrate to be processed in their heights. 
     
     
         10 . The multi-inductively coupled plasma reactor according to  claim 6 , wherein the central plasma source is one of a planar form and a dome form. 
     
     
         11 . The multi-inductively coupled plasma reactor according to  claim 6 , further comprising a central power supply to provide the central plasma source with power and a peripheral power supply to provide the peripheral plasma source with power. 
     
     
         12 . The multi-inductively coupled plasma reactor according to  claim 11 , wherein the central power supply and the peripheral power supply provide power source of different frequencies, respectively. 
     
     
         13 . The multi-inductively coupled plasma reactor according to  claim 12 , wherein the central power supply source provides power having frequency of 1˜5 MHz, and the peripheral power supply source having frequency of 1˜500 KHz. 
     
     
         14 . The multi-inductively coupled plasma reactor according to  claim 6 , wherein the substrate support is connected to a bias supply source that provides a bias power source of 1˜50 MHz. 
     
     
         15 . The multi-inductively coupled plasma reactor according to  claim 6 , wherein the central plasma source or the peripheral plasma source includes:
 a radio frequency antenna; and   a magnetic core cover that covers the radio frequency antenna and is arranged such that an entrance of magnetic flux is directed to an interior of the reactor body.   
     
     
         16 . The multi-inductively coupled plasma reactor according to  claim 15 , wherein the radio frequency antenna further includes a Faraday shield in its lower portion. 
     
     
         17 . The multi-inductively coupled plasma reactor according to  claim 6 , wherein an interference prevention electrode is arranged between the central plasma source and the peripheral plasma source and grounded so as to electrically separate the central plasma source and the peripheral plasma source each other. 
     
     
         18 . The multi-inductively coupled plasma reactor according to  claim 6 , wherein the central plasma source includes a central gas supplier and the peripheral plasma source includes a peripheral gas supplier, such that a process gas is supplied. 
     
     
         19 . The multi-inductively coupled plasma reactor according to  claim 18 , wherein the central gas supplier and the peripheral gas supplier include a plurality of gas nozzles. 
     
     
         20 . The multi-inductively coupled plasma reactor according to  claim 19 , wherein the central gas supplier and the peripheral gas supplier provide the same process gas or different process gas from the gas supply source.