Systems And Methods For Scanning A Beam Of Charged Particles

Abstract

Systems and methods of an ion implant apparatus include an ion source for producing an ion beam along an incident beam axis. The ion implant apparatus includes a beam deflecting assembly coupled to a rotation mechanism that rotates the beam deflecting assembly about the incident beam axis and deflects the ion beam. At least one wafer holder holds target wafers and the rotation mechanism operates to direct the ion beam at one of the at least one wafer holders which also rotates to maintain a constant implant angle.

1 . A system for scanning a beam of charged particles across a target surface comprising:
 a beam source for producing a beam of charged particles along an incident beam axis;   a beam deflector, positioned on the incident beam axis, for deflecting the beam of charged particles away from the incident beam axis towards the target surface; and   a rotation mechanism coupled to the beam deflector to rotate the beam deflector about the incident beam axis.   
     
     
         2 . The system of  claim 1 , the further comprising a wafer holder for holding a target wafer having the target surface, the wafer holder configured for tilting the wafer to facilitate impingement of the beam upon the target surface. 
     
     
         3 . (canceled) 
     
     
         4 . The system of  claim 2 , further comprising a tilt controller for controlling tilt of the wafer as a function of a rotational position of the beam deflector, to maintain a predetermined angle between the beam of charged particles and the target surface throughout a scan. 
     
     
         5 . The system of  claim 1 , further comprising a first wafer holder and a second wafer holder, the rotation mechanism configured for rotating the beam deflector to selectively direct the beam of charged particles towards the first wafer holder or the second wafer holder. 
     
     
         6 . The system of  claim 1 , further comprising beam scanning means for scanning the charged particle beam in a direction substantially parallel to the incident beam axis. 
     
     
         7 .- 12 . (canceled) 
     
     
         13 . The system of  claim 1 , the beam deflector comprising one of an electrostatic deflector, a pair of curved electrode plates, and a magnetic deflector. 
     
     
         14 . The system of  claim 1 , further comprising a second ion beam source for producing a second beam of charged particles. 
     
     
         15 . The system of  claim 14 , further comprising an analyzer magnet corresponding to the ion beam source and a second analyzer magnet corresponding to the second ion beam source. 
     
     
         16 . The system of  claim 1 , the beam deflector comprising a scanning magnet and a corrector magnet. 
     
     
         17 . The system of  claim 16 , the corrector magnet comprising a magnet with a fixed field. 
     
     
         18 . The system of  claim 16 , the corrector magnet comprising a pole array. 
     
     
         19 . The system of  claim 1 , the beam source comprising an x-ray shielding analyzer magnet. 
     
     
         20 . The system of  claim 1 , the beam deflector comprising a magnetic array having a plurality of poles, wherein at least one of the plurality of poles is split at the centerline of the beam. 
     
     
         21 . A method for scanning a beam of charged particles across a target surface, comprising the steps of:
 providing a beam of charged particles along an incident beam axis;   providing a beam deflector on the incident beam axis, for deflecting the beam of charged particles away from the incident beam axis towards the target surface; and   rotating the beam deflector about the incident beam axis to scan the beam across the target surface.   
     
     
         22 . The method of  claim 21 , further comprising the step of tilting the target surface depending on a rotational position of the beam deflector, to maintain impingement of the charged particles upon the target surface at a predetermined angle throughout a scan. 
     
     
         23 . The method of  claim 21 , further comprising the step of rotating the beam deflector to direct the beam to a second target surface. 
     
     
         24 . The method of  claim 21 , further comprising the step of scanning the beam in a direction substantially parallel to the incident beam axis. 
     
     
         25 . The system of  claim 1 , further comprising:
 a first wafer holder for holding a target wafer; and   a second wafer for holding a target wafer;   wherein the rotation mechanism rotates to direct the beam at the first wafer holder and the second the wafer holder.   
     
     
         26 . The system of  claim 1 , further comprising:
 a dual-chuck system for holding and transferring wafers through ion implantation, having:
 a turntable controllable via a turntable rotational mechanism; 
 a first arm extending from the turntable; 
 a second arm extending from the turntable and disposed opposite the first arm; 
 a first chuck configured with the first arm, for holding a first workpiece; 
 a second chuck configured with the second arm, for holding a second workpiece; and 
 at least one tilt mechanism for tilting one or both of the first and second arms, to vary an angle of the first or second chuck and workpiece, during ion implantation; 
   wherein the turntable rotational mechanism rotates to position the first chuck for scanning of the first workpiece with the deflected beam, while positioning the second chuck for loading or unloading of the second workpiece.   
     
     
         27 - 31 . (canceled) 
     
     
         32 . An implanter architecture, comprising one or more loadlocks, for accepting and transferring workpieces;
 a vacuum transfer, for transferring the workpieces from the loadlock; and   a plurality of ion beam implanters for accepting the workpieces from the loadlock; each ion beam implanter having:   a dual chuck system for simultaneously holding two workpieces, mounted on opposing arms of the dual chuck system, and transferring the workpieces through ion implantation;   an ion source for producing an ion beam along an incident beam axis;   a beam deflecting assembly for receiving and deflecting the ion beam towards the workpieces mounted with a first of the opposing arms; and   a rotation mechanism coupled to the beam deflecting assembly for rotating the beam deflecting assembly about the incident beam axis.   
     
     
         33 .- 67 . (canceled)