Heat-dissipating device having a layered functional unit

Abstract

A heat-dissipating device comprises a metallic layer to contact a heat source, and a layered functional unit formed on the metallic layer and including a semiconductor material and a far infrared material. Preferably, the functional unit further includes a carbon material having a large specific surface area. The heat from the metallic layer excites the electrons in the semiconductor material to jump across band gap and then release heat energy, and excites the far infrared material to radiate far infrared rays. A rapid heat dissipation rate can be achieved by increasing heat transfer area and by converting heat into far infrared rays that can be radiated away rapidly.

1 . A heat-dissipating device comprising:
 a metallic layer having a first surface adapted to contact a heat source, and a second surface; and   a layered functional unit formed on said second surface for heat exchange with said metallic layer and including a semiconductor material capable of releasing heat energy upon thermal excitation, and   a far infrared material capable of radiating far infrared rays upon thermal excitation.   
     
     
         2 . The heat-dissipating device of  claim 1 , wherein the semiconductor material and a far infrared material are mixed together. 
     
     
         3 . The heat-dissipating device of  claim 1 , wherein the layered functional unit further includes a carbon material having a large specific surface area. 
     
     
         4 . The heat-dissipating device of  claim 3 , wherein the semiconductor material, the far infrared material and the carbon material are mixed together. 
     
     
         5 . The heat-dissipating device of  claim 4 , wherein the carbon material, the semiconductor material and a far infrared material are formed as individual layers on said metallic layer and are arranged in that order from bottom to top. 
     
     
         6 . The heat-dissipating device of  claim 1 , further comprising a bonding material disposed on said first surface of said metallic layer for bonding said metallic layer to the heat source. 
     
     
         7 . The heat-dissipating device of  claim 6 , wherein the bonding material is selected from the group consisting of a conductive adhesive, indium, indium-tin, bismuth, lead, cadmium, a eutectic alloy and combinations thereof. 
     
     
         8 . The heat-dissipating device of  claim 3 , wherein the carbon material is selected from the group consisting of a diamond film, a diamond-like film, graphite and combinations thereof. 
     
     
         9 . The heat-dissipating device of  claim 1 , wherein the semiconductor material is selected from the group consisting of bismuth telluride, lead telluride, boron carbide, silicon carbide, silicon germanium, silicon germanium carbide. 
     
     
         10 . The heat-dissipating device of  claim 1 , wherein the far infrared material is a far infrared ceramic. 
     
     
         11 . The heat-dissipating device of  claim 1 , wherein the layered functional unit further includes a coloring agent.