US2011180205A1PendingUtilityA1

Carrier for manufacturing substrate and method of manufacturing substrate using the same

Assignee: SAMSUNG ELECTRO MECHPriority: Dec 15, 2009Filed: Apr 8, 2011Published: Jul 28, 2011
Est. expiryDec 15, 2029(~3.4 yrs left)· nominal 20-yr term from priority
H05K 3/0097H05K 2203/1105H05K 2201/0355B32B 15/20H05K 2203/0156H05K 2203/047H05K 3/4682H05K 3/46Y10T29/5313Y10T428/12903Y10T29/49126Y10T428/12493Y10T428/12701Y10T428/12681Y10T29/49117Y10T428/12736Y10T428/12792Y10T428/12785Y10T428/12944Y10T428/12708Y10T29/49155
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Claims

Abstract

Disclosed herein is a carrier for manufacturing a substrate, including: an insulation layer including a first metal layer formed on one side or both sides thereof; a second metal layer formed on one side of the first metal layer; and a third metal layer formed on one side of the second metal layer, wherein the second metal layer has a lower melting point than the first metal layer or the third metal layer. The carrier is advantageous in that a build up layer can be separated from a carrier by heating, so that a routing process is not required, with the result that the size of a substrate does not change when the build up layer is separated from the carrier, thereby reusing to the carrier and maintaining the compatibility between the substrate and manufacturing facilities.

Claims

exact text as granted — not AI-modified
1 . A method of manufacturing a substrate using a carrier, comprising:
 providing an insulation layer including a first metal layer formed on one side or both sides thereof;   forming a second metal layer having a lower melting point than the first metal layer on one side of the first metal layer and then forming a third metal layer having a higher melting point than the second metal layer on one side of the second metal layer to provide a carrier;   forming a build up layer on one side of the third metal layer; and   heating the second metal layer to its melting point or higher to separate the build up layer from the carrier.   
     
     
         2 . The method of manufacturing a substrate using a carrier according to  claim 1 , wherein, in the forming of the second metal layer and the third metal layer, the second metal layer is made of tin or a tin alloy. 
     
     
         3 . The method of manufacturing a substrate using a carrier according to  claim 1 , wherein, in the forming of the second metal layer and the third metal layer, the second metal layer is made of any one selected from the group consisting of tin, cadmium, lead, bismuth, zinc, and alloys or combinations thereof. 
     
     
         4 . The method of manufacturing a substrate using a carrier according to  claim 1 , further comprising: removing the second metal layer remaining on the third metal layer after the separating of the build up layer from the carrier. 
     
     
         5 . The method of manufacturing a substrate using a carrier according to  claim 1 , further comprising: removing the third metal layer after the separating of the build up layer from the carrier. 
     
     
         6 . The method of manufacturing a substrate using a carrier according to  claim 1 , wherein, in the forming of the second metal layer and the third metal layer, the second metal layer is formed on one side of the first metal layer through a plating process. 
     
     
         7 . The method of manufacturing a substrate using a carrier according to  claim 1 , wherein, in the forming of the second metal layer and the third metal layer, the second metal layer is formed on one side of the first metal layer by attaching metal foil onto the first metal layer through heating and pressing processes. 
     
     
         8 . The method of manufacturing a substrate using a carrier according to  claim 1 , wherein, in the forming of the second metal layer and the third metal layer, the third metal layer is formed on one side of the second metal layer through a plating process. 
     
     
         9 . The method of manufacturing a substrate using a carrier according to  claim 1 , wherein, in the forming of the second metal layer and the third metal layer, the third metal layer is formed on one side of the second metal layer by attaching metal foil onto the second metal layer through heating and pressing processes. 
     
     
         10 . The method of manufacturing a substrate using a carrier according to  claim 1 , wherein, in the providing of the insulation layer including the first metal layer, the first metal layer is made of copper, nickel or aluminum. 
     
     
         11 . The method of manufacturing a substrate using a carrier according to  claim 1 , wherein, in the forming of the second metal layer and the third metal layer, the third metal layer is made of copper, nickel or aluminum. 
     
     
         12 . The method of manufacturing a substrate using a carrier according to  claim 1 , wherein, in the providing of the insulation layer including the first metal layer, the insulation layer including the first metal layer is a copper clad laminate (CCL). 
     
     
         13 . The method of manufacturing a substrate using a carrier according to  claim 1 , wherein, in the forming of the second metal layer and the third metal layer, an intermetallic compound layer is formed between the first metal layer and the second metal layer or between the second metal layer and the third metal layer.

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