Light exposure mask and method for manufacturing semiconductor device using the same

Abstract

The present invention provides a light exposure mask which can form a photoresist layer in a semi-transmissive portion with uniform thickness, and a method for manufacturing a semiconductor device in which the number of photolithography steps (the number of masks) necessary for manufacturing a TFT substrate is reduced by using the light exposure mask. A light exposure mask is used, which includes a transmissive portion, a light shielding portion, and a semi-transmissive portion having a light intensity reduction function where lines and spaces are repeatedly formed, wherein the sum of a line width L of a light shielding material and a space width S between light shielding materials in the semi-transmissive portion satisfies a conditional expression (2n/3)×m≦L+S≦(6n/5)×m when a resolution of a light exposure apparatus is represented by n and a projection magnification is represented by 1/m (m≧1).

1 . A light exposure system comprising:
 a light exposure apparatus having a resolution represented by n and a projection magnification represented by 1/m (m≧1), and   a light exposure mask comprising a transmissive portion, a light shielding portion, and a semi-transmissive portion,   wherein a relation between a sum of a line width L of a light shielding material and a space width S between light shielding materials in the semi-transmissive portion, n, and m satisfies a conditional expression (n/3)×m≦L+S≦(3n/2)×m.   
     
     
         2 . A light exposure system comprising:
 a light exposure apparatus having a resolution represented by n and a projection magnification represented by 1/m (m≧1), and   a light exposure mask comprising a transmissive portion, a light shielding portion, and a semi-transmissive portion,   wherein a relation between a sum of a line width L of a light shielding material and a space width S between light shielding materials in the semi-transmissive portion, n, and m satisfies a conditional expression (2n/3)×m≦L+S≦(6n/5)×m.   
     
     
         3 . A light exposure system according to  claim 1 , wherein a relation between n, m, and L satisfies L<(2n/3)×m. 
     
     
         4 . A light exposure system according to  claim 2 , wherein a relation between n, m, and L satisfies L<(2n/3)×m. 
     
     
         5 . A light exposure system according to  claim 1 , wherein the semi-transmissive portion is arranged on a side of the light shielding portion. 
     
     
         6 . A light exposure system according to  claim 2 , wherein the semi-transmissive portion is arranged on a side of the light shielding portion.