Powder mixture to be made into evaporation source material for use in ion plating, evaporation source material for use in ion plating and method of producing the same, and gas barrier sheet and method of producing the same

Abstract

A powder mixture to be made into an evaporation source material for use in ion plating, and an evaporation source material useful for ion plating and a method of producing it, and a gas barrier sheet and a method of producing it. The powder mixture comprises 100 parts by weight of silicon oxide powder and 5 to 100 parts by weight of a conductive material powder. Preferably, both the silicon oxide powder and the conductive material powder have a mean particle diameter of 5 μm or less. The conductive material powder is preferably a powder of at least one material selected from metals and electrically conductive metallic oxides, nitrides and acid nitrides. The evaporation source material for use in ion plating is in the form of agglomerates having a mean particle diameter of 2 mm or more, or a block, obtained by granulating or compression-molding the powder mixture.

1 . A powder mixture to be made into an evaporation source material for use in ion plating, comprising
 100 parts by weight of silicon oxide powder, and   5 parts by weight or more and 100 parts by weight or less of a conductive material powder.   
     
     
         2 . The powder mixture according to  claim 1 , wherein the silicon oxide powder has a mean particle diameter of 5 μm or less, and the conductive material powder has a mean particle diameter of 5 μm or less. 
     
     
         3 . The powder mixture according to  claim 1 , wherein the silicon oxide powder has a specific surface area of 600 m 2 /g or larger. 
     
     
         4 . The powder mixture according to  claim 1 , wherein the conductive material powder comprises at least one material selected from metals and electrically conductive metallic oxides, nitrides and acid nitrides. 
     
     
         5 . The powder mixture according to  claim 4 , wherein the conductive material powder comprises zinc oxide. 
     
     
         6 . The powder mixture according to  claim 4 , wherein the conductive material powder comprises tin oxide. 
     
     
         7 . A method of producing an evaporation source material for use in ion plating, comprising the steps of:
 preparing a powder mixture comprising 100 parts by weight of silicon oxide powder and 5 parts by weight or more and 100 parts by weight or less of a conductive material powder, and   granulating or compression-molding the powder mixture into an evaporation source material for use in ion plating, in a predetermined form.   
     
     
         8 . The method according to  claim 7 , wherein the silicon oxide powder has a mean particle diameter of 5 μm or less, and the conductive material powder has a mean particle diameter of 5 μm or less. 
     
     
         9 . The method according to  claim 7 , wherein the step of making the powder mixture into an evaporation source material in a predetermined form comprises the step of granulating or compression-molding the silicon oxide powder and the conductive material powder, the components of the powder mixture, into agglomerates having a mean particle diameter of 2 mm or more, or a block. 
     
     
         10 . The method according to  claim 9 , wherein the step of making the powder mixture into an evaporation source material in a predetermined form further comprises the step of heating the agglomerates or block obtained by granulation or compression molding. 
     
     
         11 . The method according to  claim 10 , wherein the step of making the powder mixture into an evaporation source material in a predetermined form further comprises the step of sintering the agglomerates or block obtained by granulation or compression molding. 
     
     
         12 . An evaporation source material for use in ion plating, that is in the form of agglomerates having a mean particle diameter of 2 mm or more, or a block, obtained by granulating or compression-molding a powder mixture comprising 100 parts by weight of silicon oxide powder and 5 parts by weight or more and 100 parts by weight or less of a conductive material powder. 
     
     
         13 . The evaporation source material according to  claim 12 , wherein the silicon oxide powder has a mean particle diameter of 5 μm or less, and the conductive material powder has a mean particle diameter of 5 μm or less. 
     
     
         14 . The evaporation source material according to  claim 12 , wherein the conductive material powder comprises at least one material selected from metals and electrically conductive metallic oxides, nitrides and acid nitrides. 
     
     
         15 . The evaporation source material according to  claim 14 , wherein the conductive material powder comprises zinc oxide. 
     
     
         16 . The evaporation source material according to  claim 14 , wherein the conductive material powder comprises tin oxide. 
     
     
         17 . A method of producing a gas barrier sheet, comprising the steps of:
 preparing an evaporation source material for use in ion plating, in a predetermined form, by compression-molding or granulating a powder mixture comprising 100 parts by weight of silicon oxide powder and 5 parts by weight or more and 100 parts by weight or less of a conductive material powder, and   depositing a gas barrier film on a substrate by ion plating using as a source the evaporation source material.   
     
     
         18 . The method according to  claim 17 , wherein the silicon oxide powder has a mean particle diameter of 5 μm or less, and the conductive material powder has a mean particle diameter of 5 μm or less. 
     
     
         19 . The method according to  claim 17 , wherein the conductive material powder comprises at least one material selected from metals and electrically conductive metallic oxides, nitrides and acid nitrides. 
     
     
         20 . A gas barrier sheet comprising a substrate and a gas barrier film formed at least on one side of the substrate,
 the gas barrier film being Si—O—Sn film in which the number of Si atoms, that of O atoms and that of Sn atoms is in the ratio of 100:(150-400):(2-60), the ratio being constant along the thickness of the film.