Semiconductor device

Abstract

A semiconductor device that attenuates light to the circuit element area is provided. The semiconductor device includes light-sensitive element area formed on substrate and a circuit element area formed on the substrate. Additionally, a multilayer wiring area is formed on circuit element area. A Tantalum film (which is generally made of tantalum or a tantalum compound) is formed on the surface of the multilayer wiring area to attenuate incident light on circuit element area.

1 . A method comprising:
 forming a light-sensitive element area and a circuit element area;   forming a wiring area on the light-sensitive element area and circuit element area;   etching at least a portion of the wiring area to form an opening at the position corresponding to the light-sensitive element area;   forming a film made of at least one of tantalum and a tantalum compound on the wiring area and the opening; and   etching the at least a portion of the film to expose the light-sensitive element area.   
     
     
         2 . The method of  claim 1 , wherein the method further comprises:
 forming an etching stop layer that covers the light-sensitive element area; and   etching the wiring area until the etching stop layer is exposed, when the opening is formed.   
     
     
         3 . The method of  claim 2 , wherein the method further comprises etching stop layer is etched to expose the light-sensitive element area.