Developing solution for photolithography, method for forming resist pattern, and method and apparatus for producing developing solution for photolithography

Abstract

Firstly, to provide a developing solution for photolithography in which tetrabutylammonium hydroxide (TBAH) is used as an alkaline agent of the developing solution and deposition of TBAH is suppressed. Secondary, to provide a method for producing a developing solution for photolithography capable of suppressing TBAH deposition when producing the developing solution by diluting a concentrated developing solution containing TBAH and a production apparatus used for the production method. The present invention is firstly a developing solution for photolithography comprising tetrabutylammonium hydroxide (A), and at least one selected from the group consisting of a water-soluble organic solvent (B1), a surfactant (B2), and a clathrate compound (B3). The present invention is secondary characterized by maintaining the temperature of liquid at 27° C. or higher during dilution.

1 . A developing solution for photolithography, comprising:
 tetrabutylammonium hydroxide (A), and   at least one selected from the group consisting of a water-soluble organic solvent (B1), a surfactant (B2), and a clathrate compound (B3).   
     
     
         2 . The developing solution for photolithography according to  claim 1 , comprising the water-soluble organic solvent (B1), wherein the content of the water-soluble organic solvent (B1) is 1% to 10% by mass. 
     
     
         3 . The developing solution for photolithography according to  claim 1  or  2 , comprising the water-soluble organic solvent (B1), wherein the water-soluble organic solvent (B1) is an alcohol. 
     
     
         4 . The developing solution for photolithography according to  claim 3 , wherein the alcohol is a polyhydric alcohol. 
     
     
         5 . The developing solution for photolithography according to  claim 4 , wherein the polyhydric alcohol is at least one selected from the group consisting of ethylene glycol, propylene glycol, and glycerin. 
     
     
         6 . The developing solution for photolithography according to  claim 3 , wherein the alcohol is at least one selected from the group consisting of isopropanol, n-butanol, isobutanol, and sec-butanol. 
     
     
         7 . The developing solution for photolithography according to  claim 1 , comprising the surfactant (B2), wherein the content of the surfactant (B2) is 0.01% to 10% by mass. 
     
     
         8 . The developing solution for photolithography according to  claim 1 , comprising the clathrate compound (B3), wherein the clathrate compound (B3) is at least one selected from the group consisting of a cyclodextrin and a crown ether. 
     
     
         9 . The developing solution for photolithography according to  claim 1 , used for producing a semiconductor element having a half pitch size of 49 nm or less. 
     
     
         10 . The developing solution for photolithography according to  claim 1 , wherein the content of halogens is 10 ppm or less, the content of metal ions is 100 ppb or less, and the content of carbonate ion is 1% by mass or less. 
     
     
         11 . A method for forming a resist pattern, using the developing solution for photolithography according to  claim 1 . 
     
     
         12 . A concentrated developing solution for photolithography, comprising:
 tetrabutylammonium hydroxide (A), and   at least one selected from the group consisting of a water-soluble organic solvent (B1), a surfactant (B2), and a clathrate compound (B3),   wherein the content of the tetrabutylammonium hydroxide (A) is 10% by mass or more.   
     
     
         13 . A method for producing a developing solution for photolithography, comprising mixing a tetrabutylammonium hydroxide aqueous solution of a first concentration and pure water in a mixing part to prepare an aqueous solution containing tetrabutylammonium hydroxide of a second concentration diluted to less than the first concentration, wherein the temperature of the tetrabutylammonium hydroxide aqueous solution fed to the mixing part and the temperature of the pure water are 27° C. or higher and the temperature of the liquid mixed in the mixing part is maintained at 27° C. or higher. 
     
     
         14 . The method for producing a developing solution for photolithography according to  claim 13 , wherein the first concentration is above 30% by mass and the second concentration is 30% by mass or less. 
     
     
         15 . A developing solution for photolithography, produced by the method for producing a developing solution for photolithography according to  claim 13  or  14 . 
     
     
         16 . A method for forming a resist pattern, using the developing solution for photolithography according to  claim 15 . 
     
     
         17 . An apparatus for producing a developing solution for photolithography, comprising:
 a mixing part which is equipped with a stirring means, a first feed pipe to feed a tetrabutylammonium hydroxide aqueous solution of a first concentration, and a second feed pipe to feed pure water;   a first warming means for warming the tetrabutylammonium hydroxide aqueous solution fed from the first feed pipe into the mixing part to 27° C. or higher;   a second warming means for warming the pure water fed from the second feed pipe into the mixing part to 27° C. or higher; and   a temperature control means for maintaining the temperature of the liquid in the mixing part at 27° C. or higher when the tetrabutylammonium hydroxide aqueous solution of the first concentration fed from the first feed pipe into the mixing part and the pure water fed from the second feed pipe into the mixing part are mixed by the stirring means to prepare a developing solution for photolithography containing tetrabutylammonium hydroxide of a second concentration less than the first concentration.