US2011159413A1PendingUtilityA1
Titania-doped quartz glass and making method
Est. expiryDec 25, 2029(~3.4 yrs left)· nominal 20-yr term from priority
C03B 2201/23C03B 19/1453C03B 19/1423C03B 2201/21C03B 2201/42G03F 7/2008C03C 2201/06C03B 2207/06C03B 2207/36B82Y 10/00B82Y 40/00C03C 3/06G03F 1/24C03B 2207/12
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Claims
Abstract
A titania-doped quartz glass which experiences a reduction in OH group concentration of less than or equal to 100 ppm upon heat treatment at 900° C. for 100 hours is suitable as the EUV lithography member.
Claims
exact text as granted — not AI-modified1 . A titania-doped quartz glass which experiences a reduction in OH group concentration of less than or equal to 100 ppm upon heat treatment at 900° C. for 100 hours.
2 . The titania-doped quartz glass of claim 1 wherein the difference between maximum and minimum reductions of OH group concentration upon the 900° C./100-hr heat treatment is less than or equal to 50 ppm.
3 . The titania-doped quartz glass of claim 1 , having an OH group concentration of 300 ppm to 950 ppm after the 900° C./100-hr heat treatment.
4 . The titania-doped quartz glass of claim 1 , having an OH group concentration gradient of less than or equal to 100 ppm/cm after the 900° C./100-hr heat treatment.
5 . The titania-doped quartz glass of claim 1 , having a hydrogen molecule concentration of less than or equal to 5×10 17 molecules/cm 3 .
6 . The titania-doped quartz glass of claim 1 , containing 3 to 10% by weight of titania.
7 . An EUV lithographic member comprising the titania-doped quartz glass of claim 1 .
8 . The member of claim 7 , which is a EUV lithographic photomask substrate.
9 . The member of claim 7 , which is a mirror in a reflecting optical system of a EUV lithography apparatus.
10 . A method for preparing a titania-doped quartz glass, comprising the steps of subjecting a silicon-providing reactant gas and a titanium-providing reactant gas to oxidation or flame hydrolysis with the aid of a combustible gas and a combustion-supporting gas, to thereby form synthetic silica-titania fine particles, depositing the silica-titania fine particles on a rotating target, and concurrently melting and vitrifying the deposited particles into titania-doped quartz glass,
the method further comprising the step of feeding oxygen gas as the combustion-supporting gas through a central tube of a burner in admixture with the silicon-providing reactant gas and the titanium-providing reactant gas in a molar ratio of oxygen gas to the sum of the silicon-providing reactant gas and the titanium-providing reactant gas of at least 5.
11 . A method for preparing a titania-doped quartz glass, comprising the steps of subjecting a silicon-providing reactant gas and a titanium-providing reactant gas to oxidation or flame hydrolysis with the aid of a combustible gas and a combustion-supporting gas, to thereby form synthetic silica-titania fine particles, depositing the silica-titania fine particles on a rotating target, and concurrently melting and vitrifying the deposited particles into titania-doped quartz glass,
the method further comprising the step of injecting hydrogen gas as the combustible gas through one or more hydrogen gas feed tubes of a burner at a linear velocity of less than or equal to 100 m/sec.
12 . The method of claim 10 wherein
the flow rates of the combustible gas, the combustion-supporting gas, the silicon-providing reactant gas and the titanium-providing reactant gas are controlled so that respective variations of the flow rates may fall within ±1%,
the temperatures of cooling air introducing from the outside of a quartz glass manufacturing furnace thereinto, exhaust gas from the furnace, and ambient air surrounding the furnace are controlled so that respective variations of the temperatures may fall within ±2.5° C., and
the target is rotated at a rotational speed of at least 5 rpm when the silica-titania fine particles are deposited on the rotating target.Join the waitlist — get patent alerts
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