Semiconductor device with fuse and method for fabricating the same

Abstract

A method for fabricating a semiconductor with a fuse includes providing a substrate, forming an insulation layer over the substrate, forming a polysilicon hard mask to form a metal contact over the insulation layer, forming a first mask pattern to form a fuse over the polysilicon hard mask, and removing the polysilicon hard mask exposed by the first hard mask pattern to form a polysilicon fuse connected to a portion of the polysilicon hard mask.

1 - 10 . (canceled) 
     
     
         11 . A semiconductor device with a fuse, comprising,
 a substrate employing an insulation layer thereon;   a polysilicon fuse formed of a polysilicon hard mask for a metal contact over the insulation layer;   an insulation layer covering the polysilicon fuse; and   a fuse box for exposing a center portion of the polysilicon fuse while the insulation layer of the predetermined thickness remains on the polysilicon fuse.   
     
     
         12 . The semiconductor of  claim 11 , further comprising a metal line disposed over a layer with the polysilicon fuse thereon. 
     
     
         13 . The semiconductor of  claim 11 , wherein edges of the polysilicon fuse not exposed by the fuse box is thinner than the center portion of the polysilicon fuse. 
     
     
         14 . The semiconductor of  claim 11 , wherein the edges of the polysilicon fuse not exposed by the fuse box has an ion implantation region with a higher resistance than the center portion of the polysilicon fuse exposed by the fuse box. 
     
     
         15 - 17 . (canceled) 
     
     
         18 . A semiconductor device with a fuse, comprising:
 a substrate employing an insulation layer thereon;   a fuse over the insulation layer;   an insulation layer covering the fuse; and   a fuse box disposed in the insulation layer and exposing a center portion of the fuse while having the insulation layer on the fuse remain to a predetermined thickness.   
     
     
         19 . The semiconductor device of  claim 18 , wherein the fuse includes polysilicon.