Fabricating methods of reflective liquid crystal display and top-emitting oled display

Abstract

Methods for forming a top-emitting organic light emitting display and a reflective type liquid crystal display are provided. The method for forming a top-emitting organic light emitting display comprises: providing a handling substrate; providing a composite layer on the handling substrate; forming an organic light emitting unit on the composite layer; and forming a top electrode on the organic light emitting unit.

1 . A method for forming a top-emitting organic light emitting display, comprising:
 providing a handling substrate;   providing a composite layer on the handling substrate;   forming an organic light emitting unit on the composite layer; and   forming a top electrode on the organic light emitting unit.   
     
     
         2 . The method as claimed in  claim 1 , wherein the step of forming the composite layer comprises:
 forming a first layer on the handling substrate;   forming a metal layer on the first layer serving as a bottom electrode; and   forming a second layer on the metal layer.   
     
     
         3 . The method as claimed in  claim 2 , wherein the first layer and the second layer are formed by a coating process. 
     
     
         4 . The method as claimed in  claim 1 , further comprising a step of removing the handling substrate. 
     
     
         5 . The method as claimed in  claim 3 , wherein the first layer and the second layer comprise polycarbonate (PC), polyethersulfone (PES), polyarylate (PAR), polyimide (PI), polyethylene terephathalate (PET) or polyetherimide (PEI). 
     
     
         6 . The method as claimed in  claim 2 , wherein the thickness of the metal layer is from 10% to 50% the thickness of the first layer or the second layer. 
     
     
         7 . The method as claimed in  claim 2 , wherein the metal layer comprises platinum (Pt), palladium (Pd), iridium (Ir), gold (Au), tungsten (W), nickel (Ni), silver (Ag) or aluminum (Al). 
     
     
         8 . The method as claimed in  claim 7 , wherein the metal layer is formed by a hot embossing or electroless deposition process. 
     
     
         9 . A method for forming a reflective type liquid crystal display, comprising:
 providing a handling substrate;   providing a composite layer on the handling substrate; and   forming a thin film transistor array on the composite layer.   
     
     
         10 . The method as claimed in  claim 9 , wherein the step of forming the composite layer comprises:
 forming a first layer on the handling substrate;   forming a metal layer on the first layer; and   forming a second layer on the metal layer   
     
     
         11 . The method as claimed in  claim 10 , further comprising:
 forming a plurality of transparent pixel electrodes on the thin film transistor array to connect to the thin film transistor array;   providing a transparent plastic substrate opposite to the first layer;   forming a common electrode on the transparent plastic substrate and facing the first layer; and   forming a liquid crystal layer between the first layer and the transparent plastic substrate.   
     
     
         12 . The method as claimed in  claim 10 , wherein the first layer serves as a flexible substrate of a display device. 
     
     
         13 . The method as claimed in  claim 10 , wherein the first layer and the second layer are formed by a coating process. 
     
     
         14 . The method as claimed in  claim 9 , further comprising a step of removing the handling substrate. 
     
     
         15 . The method as claimed in  claim 13 , wherein the first layer or the second layer comprise polycarbonate (PC), polyethersulfone (PES), polyarylate (PAR), polyimide (PI), polyethylene terephathalate (PET) or polyetherimide (PEI). 
     
     
         16 . The method as claimed in  claim 10 , wherein the metal layer comprises platinum (Pt), palladium (Pd), iridium (Ir), gold (Au), tungsten (W), nickel (Ni), silver (Ag) or aluminum (Al) 
     
     
         17 . The method as claimed in  claim 16 , wherein the metal layer is formed by a hot embossing or electroless deposition process. 
     
     
         18 . The method as claimed in  claim 9 , wherein the handling substrate comprises glass, quartz, ceramic or silicon wafer.