Plasma etching chamber

Abstract

Disclosed is a plasma etching chamber including a gas distribution plate guiding a reaction gas to the edge of the wafer; a plate disposed to be spaced apart from the gas distribution plate; and bumper portions protruding on at least one of opposite surfaces of the gas distribution plate and the plate to allow the pressure of the reaction gas moving to the edge of the wafer to be uniform.

1 . A plasma etching chamber for etching an edge of a wafer, comprising:
 a gas distribution plate guiding a reaction gas to the edge of the wafer;   a plate disposed to be spaced apart from the gas distribution plate; and   bumper portions protruding on at least one of opposite surfaces of the gas distribution plate and the plate.   
     
     
         2 . The plasma etching chamber as set forth in  claim 1 , further comprising upper and lower electrodes disposed to correspond to each other at the edge of the wafer with the wafer interposed therebetween. 
     
     
         3 . The plasma etching chamber as set forth in  claim 1 , wherein the bumper portions are alternately formed on the gas distribution plate and the plate. 
     
     
         4 . The plasma etching chamber as set forth in  claim 1 , wherein the bumper portions are formed at an edge of the gas distribution plate or the plate. 
     
     
         5 . The plasma etching chamber as set forth in  claim 1 , wherein the bumper portions are formed in a ring shape. 
     
     
         6 . The plasma etching chamber as set forth in  claim 1 , wherein a predetermined spacing between the gas distribution plate and the plate is maintained by spacers. 
     
     
         7 . The plasma etching chamber as set forth in  claim 6 , wherein the spacing is 1 mm. 
     
     
         8 . The plasma etching chamber as set forth in  claim 7 , wherein the bumper portion has a height of 0.6 mm. 
     
     
         9 . The plasma etching chamber as set forth in  claim 1 , wherein the gas distribution plate further comprises a shield ring covering bottom and side surfaces of the edge thereof. 
     
     
         10 . The plasma etching chamber as set forth in  claim 9 , wherein the width of the shield ring is from about 15% to about 40% of the radius of the gas distribution plate. 
     
     
         11 . A plasma etching chamber etching an edge of a wafer, comprising:
 a gas distribution plate having a recessed groove formed at a bottom surface thereof;   a baffle disposed in an inside of the recessed groove of the gas distribution plate to be spaced apart from the gas distribution plate, the baffle guiding an inert gas supplied to the recessed groove; and   bumper portions protruding on at least one of opposite surfaces of the gas distribution plate and the baffle.   
     
     
         12 . A plasma etching chamber for etching an edge of a wafer, comprising:
 a gas distribution plate guiding a reaction gas to the edge of the wafer; and   a shield ring formed at an edge of the gas distribution plate so as to prevent contamination of the gas distribution plate, wherein the width of the shield ring is from about 15% to about 40% of the radius of the gas distribution plate.   
     
     
         13 . The plasma etching chamber as set forth in  claim 12 , wherein yttrium is coated on a surface of the shield ring. 
     
     
         14 . The plasma etching chamber as set forth in  claim 2  wherein the bumper portions are formed at an edge of the gas distribution plate or the plate. 
     
     
         15 . The plasma etching chamber as set forth in  claim 2  wherein its gas distribution plate further comprises a shield ring covering bottom and side surfaces of the edge thereof.