Thin film transistor, thin film transistor display panel, and manufacturing method thereof

Abstract

A thin film transistor is provided. The thin film transistor includes a frame formed on a substrate and having a plurality of grooves, line-shaped semiconductors disposed in at least one of the grooves, a first electrode overlapping with the line-shaped semiconductors, and second and third electrodes connected to ends of the line-shaped semiconductors.

1 . A method of manufacturing a thin film transistor display panel, comprising steps of:
 forming a frame having a plurality of grooves on a substrate;   disposing line-shaped semiconductors into the grooves;   forming a gate line overlapping with the line-shaped semiconductors;   forming a data line and a drain electrode insulated from the gate line and intersecting the gate line, wherein the data line and the drain electrode are connected to ends of the line-shaped semiconductors; and   forming a pixel electrode connected to the drain electrode.   
     
     
         2 . The method of  claim 1 , wherein the disposing line-shaped semiconductor comprises:
 applying a photosensitive material having the line-shaped semiconductors and forming a photosensitive layer comprising the line-shaped semiconductors;   patterning the photosensitive layer and forming a photosensitive pattern, the photosensitive pattern overlapping with the frame, wherein a portion of the line-shaped semiconductors is exposed; and   removing the photosensitive material of the photosensitive pattern having the line-shaped semiconductors.   
     
     
         3 . The method of  claim 2 , wherein each of the line-shaped semiconductors comprises a core made of single-crystal silicon, an insulating layer surrounding the core, and a conductive member surrounding the insulating layer. 
     
     
         4 . The method of  claim 3 , further comprising removing the insulating layer and the conductive member of the exposed line-shaped semiconductors. 
     
     
         5 . The method of  claim 2 , wherein the line-shaped semiconductors comprises a core made of single-crystal silicon, an insulating layer surrounding the core, and a conductive member surrounding the insulating layer; and
 wherein the removing the photosensitive material comprises exposing about ½ to ⅖ of the conductive member.   
     
     
         6 . The method of  claim 1 , wherein the frame comprises a transparent organic material having photosensitivity. 
     
     
         7 . The method of  claim 1 , wherein a height of the grooves is 2 μm or less and an interval between adjacent grooves is in a range of 2 μm to 4 μm. 
     
     
         8 . The method of  claim 1 , wherein the forming a data line and a drain electrode comprises:
 disposing an insulating layer on the gate line;   forming contact holes in the insulating layer and exposing the ends of the line-shaped semiconductors; and   applying and patterning a conductive layer on the insulating layer.