Growth of Single Crystal Nanowires

Abstract

A diode is provided which comprises a cathode, an anode, and at least one crystalline nanowire in electrical communication with said cathode and said anode. The crystalline nanowire comprises a group IV metal which is substantially straight and substantially free of nanoparticles.

1 . A diode, comprising:
 a cathode;   an anode; and   at least one crystalline nanowire in electrical communication with said cathode and said anode, said crystalline nanowire comprising a group IV metal which is substantially straight and substantially free of nanoparticles.   
     
     
         2 . The diode of  claim 1 , wherein the group IV metal is selected from the group consisting of silicon and germanium. 
     
     
         3 . The diode of  claim 1 , wherein said crystalline nanowire comprises silicon and germanium. 
     
     
         4 . The diode of  claim 1 , wherein the nanowire has a straightness parameter of no more than 2. 
     
     
         5 . The diode of  claim 1 , wherein the nanowire has a metallic nanocrystal disposed at one end thereof. 
     
     
         6 . The diode of  claim 5 , wherein the metallic nanocrystal is selected from the group consisting of gold and aluminum nanocrystals. 
     
     
         7 . The diode of  claim 1 , wherein the nanowire has an average diameter of about 5 nm to about 50 nm. 
     
     
         8 . The diode of  claim 1 , wherein the nanowire has a length of at least one, micron. 
     
     
         9 . The diode of  claim 1 , wherein the nanowires is a single crystal based on HR TEM analysis. 
     
     
         10 . The diode of  claim 1 , wherein the nanowires is a single crystal of silicon. 
     
     
         11 . The diode of  claim 1 , wherein the nanowires is a single crystal of silicon, has a metallic nanocrystal disposed at one end thereof, has an average diameter of about 5 nm to about 50 nm, and has an average length of at least one micron. 
     
     
         12 . The diode of  claim 1 , wherein the diode is a light emitting diode. 
     
     
         13 . The diode of  claim 1 , wherein the nanowire contains less than about 5 wt. % nanoparticles, based on the total mass of the nanowires and nanoparticles. 
     
     
         14 . The diode of  claim 1 , wherein the nanowire contains less than about 1 wt. % nanoparticles, based on the total mass of the nanowires and nanoparticles. 
     
     
         15 . The diode of  claim 1 , wherein the nanowires is disposed on a substrate comprising a catalyst site attached to the substrate surface, wherein the nanowire is covalently attached to the catalyst site. 
     
     
         16 . The diode of  claim 1 , wherein said crystalline nanowire is substantially free of Group IV metal nanoparticles. 
     
     
         17 . The diode of  claim 1 , wherein said nanowire has a plurality of inorganic particles disposed along its axis. 
     
     
         18 . The diode of  claim 17 , wherein said nanowire delivers charge to the inorganic particles. 
     
     
         19 . The diode of  claim 17 , wherein said nanowire detects changes in the resistance of the inorganic particles. 
     
     
         20 . The diode of  claim 1 , further comprising a second nanowire of different composition than said nanowire.