US2011115042A1PendingUtilityA1

Structure for decreasing minimum feature size in an integrated circuit

Assignee: LABONTE ANDRE PAULPriority: Dec 2, 2003Filed: Jan 13, 2011Published: May 19, 2011
Est. expiryDec 2, 2023(expired)· nominal 20-yr term from priority
H10F 39/806H10F 39/024B81C 1/00547B81C 2201/0132
60
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

A structure for decreasing minimum feature size in an integrated circuit design that includes a substrate comprising a first material is provided. The structure comprises a layer of second material formed on a surface of the substrate and a micro-aperture formed in the layer of second material. The micro-aperture has sidewalls formed to be substantially perpendicular to the surface of the substrate and a horizontal tip formed on the surface of the substrate and extending orthogonally from a portion of the sidewalls.

Claims

exact text as granted — not AI-modified
1 . A structure for decreasing minimum feature size in an integrated circuit design that includes a substrate comprising a first material, the structure comprising:
 a layer of second material formed on a surface of the substrate; and   a micro-aperture formed in the layer of second material, the micro-aperture having sidewalls formed to be substantially perpendicular to the surface of the substrate and a horizontal tip formed on the surface of the substrate and extending orthogonally from a portion of the sidewalls.   
     
     
         2 . The structure of  claim 1 , wherein the horizontal tip defines an exposed portion of the surface of the substrate. 
     
     
         3 . The structure of  claim 1 , wherein the first material is different than the second material. 
     
     
         4 . The structure of  claim 1 , wherein the first material comprises single crystal silicon. 
     
     
         5 . The structure of  claim 1 , wherein the first material comprises polysilicon. 
     
     
         6 . The structure of  claim 1 , wherein the second material comprises a nitride. 
     
     
         7 . The structure of  claim 6 , wherein the nitride comprises silicon nitride. 
     
     
         8 . The structure of  claim 1 , wherein the second material comprises polysilicon. 
     
     
         9 . The structure of  claim 1 , wherein the horizontal tip defines a substantially circular exposed portion of the surface of the substrate. 
     
     
         10 . The structure of  claim 1 , wherein the horizontal tip defines an exposed portion of the surface of the substrate, and further comprising:
 a photosensitive device formed in the exposed portion of the surface of the substrate.   
     
     
         11 . The structure of  claim 9 , wherein the exposed portion of the surface of the substrate is substantially circular. 
     
     
         12 . The structure of  claim 1 , wherein the horizontal tip defines an exposed portion of the surface of the substrate, and further comprising;
 a microscale lens formed in the exposed portion of the surface of the substrate.   
     
     
         13 . The structure of  claim 11 , wherein the exposed portion of the surface of the substrate is substantially circular.

Join the waitlist — get patent alerts

Track US2011115042A1 — get alerts on status changes and closely related new filings.

We store only your email — no account needed. See our privacy policy.