US2011110015A1PendingUtilityA1

Methods to improve the efficiency and reduce the energy losses in high energy density capacitor films and articles comprising the same

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Assignee: PENN STATE RES FOUNDPriority: Apr 11, 2007Filed: Apr 11, 2008Published: May 12, 2011
Est. expiryApr 11, 2027(~0.7 yrs left)· nominal 20-yr term from priority
Inventors:Qiming ZhangQin ChenXin ZhouMinren LinShihai Zhang
H10D 1/684H01G 4/085Y10T29/435H01G 4/145H01G 4/206H01G 4/20Y02T10/70H01G 4/33
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Claims

Abstract

A multilayer film useful for capacitive applications comprises a high energy density layer and a dielectric blocking layer. In some embodiments, a conducting film is located between the high energy density layer and the blocking layer. The high energy density layer may be a fluoropolymer, such as a polymer or copolymer of poly-1,1-difluoroethene or a derivative thereof. The multilayer film may have high energy density (for example,. >8 J/cm 3 ) and low dielectric loss, for example less than 2%, and preferably less than 1%.

Claims

exact text as granted — not AI-modified
1 . An apparatus, comprising:
 a first electrode;   a second electrode; and   a multilayer film located between the first electrode and the second electrode, the multilayer film comprising:   a high energy density layer, the high energy density layer comprising a high energy density material providing an electric energy density higher than 10 J/cm 3 ; and   a blocking layer, the blocking layer being a dielectric layer having an electric resistivity approximately equal to or greater than 10 15  Ω·cm.   
     
     
         2 . The apparatus of  claim 1 , the apparatus being a charge storage device. 
     
     
         3 . The apparatus of  claim 1 , wherein the high energy density material is a polar polymer. 
     
     
         4 . The apparatus of  claim 1 , wherein the high energy density material is a fluoropolymer. 
     
     
         5 . The apparatus of  claim 1 , wherein the high energy density material is a polar fluoropolymer. 
     
     
         6 . The apparatus of  claim 5  wherein the polar fluoropolymer is a polymer or copolymer of poly-1,1-difluoroethene. 
     
     
         7 . The apparatus of  claim 5  wherein the polar fluoropolymer is a polymer or copolymer of a poly-1,1-difluoroethene derivative. 
     
     
         8 . The apparatus of  claim 1 , wherein the high energy density layer comprises a fluoropolymer, or blend thereof, the fluoropolymer being selected from a group of fluoropolymers comprising: PVDF, P(VDF-CTFE), P(VDF-CDFE), P(VDF-CFE), P(VDF-HFP), P(VDF-CDFE), P(VDF-TrFE-CTFE), P(VDF-TrFE-CFE), P(VDF-TrFE-HFP), P(VDF-TrFE-CDFE), P(VDF-TFE-CTFE), P(VDF-TFE-CFE), P(VDF-TFE-HFP), and P(VDF-TFE-CDFE),
 wherein VDF: vinylidenedifluoroethylene, HFP: hexafluoropropylene, VDF: vinylidenedifluoroethylene, CTFE: chlorotrifluoroethylene, CFE: chlorofluoroethylene, CDFE: chlorodifluoroethylene, TrFE: trifluoroethylene, and TFE: tetrafluoroethylene.   
     
     
         9 . The apparatus of  claim 1 , wherein the blocking layer comprises an inorganic dielectric layer. 
     
     
         10 . The apparatus of  claim 9 , wherein the inorganic dielectric layer comprises an inorganic nitride, inorganic oxide, or diamond-like carbon. 
     
     
         11 . The apparatus of  claim 1 , wherein the blocking layer comprises a non-polar polymer layer. 
     
     
         12 . The apparatus of  claim 1 , wherein the blocking layer comprises a polymer selected from a group of polymers comprising: polystyrene, polycarbonates, polypropylene, poly(2,6-dimethy-1,4-phenylene oxide), polyethylene terephthalate, polyethylene naphthalate, poly(ethylene-co-tetrafluoroethylene), polyetheretherketone, poly(phenylene sulfide), polyether imide, poly(diaminodiphenylmethane/4,4′-diphenylmethane diisocyanate), and polysulfone. 
     
     
         13 . The apparatus of  claim 1 , wherein the blocking layer has a dielectric loss less than 1%. 
     
     
         14 . The apparatus of  claim 1 , wherein the multilayer film further comprises an electrically conducting film disposed between the high energy density layer and the dielectric layer. 
     
     
         15 . The apparatus of  claim 1 , wherein the high energy density layer has a dielectric constant greater than 5. 
     
     
         16 . The apparatus of  claim 15 , wherein the high energy density layer comprises a cellulose polymer. 
     
     
         17 . The apparatus of  claim 15 , wherein the high energy density layer comprises a siloxane polymer. 
     
     
         18 . The apparatus of  claim 15 , wherein the high energy density layer comprises an acrylate polymer. 
     
     
         19 . The apparatus of  claim 1 , the multilayer film being a bilayer film. 
     
     
         20 . The apparatus of  claim 1 , the multilayer film having a plurality of high energy density layers and at least one blocking layer. 
     
     
         21 . The apparatus of  claim 1 , the multilayer film having a layer thickness ratio defined as a thickness of the blocking layer divided by a thickness of the high energy density layer,
 the layer thickness ratio being in the range 1/99 to 99/1.   
     
     
         22 . The apparatus of  claim 21 , the layer thickness ratio being in the range 5/95 to 95/5. 
     
     
         23 . The apparatus of  claim 21 , the layer thickness ratio being in the range 5/95 to 60/40. 
     
     
         24 . The apparatus of  claim 1 , wherein the multilayer film has an overall dielectric constant higher than 5 at 1 kHz, and a dielectric loss lower than about 3%. 
     
     
         25 . The apparatus of  claim 1 , wherein the high energy density layer has a thickness between 10 nm and 5 microns. 
     
     
         26 . The apparatus of  claim 1 , the multilayer film comprising a plurality of high energy density layers and a plurality of blocking layers arranged in an alternating sequence. 
     
     
         27 . An apparatus, comprising:
 a first electrode;   a second electrode; and   a multilayer film located between the first electrode and the second electrode, the multilayer film comprising:   a high energy density layer; and   a blocking layer, the blocking layer being a dielectric layer having an electric resistivity approximately equal to or greater than 10 16  Ω·cm,   wherein the high energy density layer comprises a polar fluoropolymer.   
     
     
         28 . The apparatus of  claim 27 , wherein the blocking layer is an inorganic dielectric layer. 
     
     
         29 . The apparatus of  claim 27 , wherein the blocking layer is an non-polar dielectric polymer layer. 
     
     
         30 . The apparatus of  claim 27 , further comprising a conducting layer between the high energy density layer and the blocking layer. 
     
     
         31 . The apparatus of  claim 27 , comprising a plurality of high energy density layers and a plurality of blocking layers, the high energy density layers alternating with the blocking layers. 
     
     
         32 . A process to fabricate a charge storage apparatus, comprising:
 preparing a multilayer film, the multilayer film comprising at least one high energy density layer and at least one blocking layer; and   locating the multilayer film between a pair of electrodes.   
     
     
         33 . The process of  claim 32 , wherein the high energy density layer comprises a polar fluoropolymer. 
     
     
         34 . The process of  claim 32 , wherein the multilayer film is prepared using spin coating. 
     
     
         35 . The process of  claim 32  wherein the multilayer film is prepared using a coextrusion of the high energy density layer and the dielectric layer through a multiple film die. 
     
     
         36 . The process of  claim 32 , wherein the multilayer film is prepared using vapor deposition.

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