Semiconductor substrate, semiconductor device and method of manufacturing the same

Abstract

A semiconductor substrate ( 1 ) includes a plurality of semiconductor elements ( 2 ) in which functional elements are constructed and which is formed in a grid pattern, wherein continuous linear grooves ( 3 ) are formed on longitudinal and lateral separating lines ( 4 ) that individually separate the plurality of semiconductor elements ( 2 ) with the exception of intersections of the separating lines ( 4 ) and portions corresponding to corners of each semiconductor element ( 2 ).

1 . A semiconductor substrate on which a plurality of semiconductor elements in which functional elements are constructed are formed in a grid pattern, wherein linear grooves are formed on longitudinal and lateral separating lines that individually separate the plurality of semiconductor elements with the exception of intersections of the separating lines. 
     
     
         2 . The semiconductor substrate according to  claim 1 , wherein the grooves are continuously formed with the exception of portions corresponding to corners of each semiconductor device. 
     
     
         3 . The semiconductor substrate according to  claim 1 , wherein the grooves are continuously formed with the exception of portions corresponding to an outer periphery of each semiconductor device. 
     
     
         4 . (canceled) 
     
     
         5 . A method of manufacturing a semiconductor device comprising the steps of: forming linear grooves by anisotropic etching, in a semiconductor substrate on which a plurality of semiconductor elements having functional elements constructed are formed in a grid pattern, on longitudinal and lateral separating lines that individually separate the plurality of semiconductor elements with the exception of intersections of the separating lines; forming a modified region inside the substrate by irradiating, after forming the grooves, a laser beam along each separating line while at the same time focusing the laser beam to the inside of the substrate; and forming individual semiconductor devices by applying, after forming the modified region, external force to the semiconductor substrate to separate the semiconductor substrate along each separating line. 
     
     
         6 . The method of manufacturing a semiconductor device according to  claim 5 , wherein the grooves are continuously formed with the exception of portions corresponding to corners of each semiconductor element. 
     
     
         7 . The method of manufacturing a semiconductor device according to  claim 5 , wherein the grooves are continuously formed with the exception of portions corresponding to an outer periphery of each semiconductor element. 
     
     
         8 . The method of manufacturing a semiconductor device according to  claim 5 , wherein in the step of forming a modified region, the number of laser beam scans on a groove formation portion is set lower than the number of laser beam scans on a groove nonformation portion. 
     
     
         9 . The method of manufacturing a semiconductor device according to  claim 5 , further comprising the step of forming a depression constituting a diaphragm structure on a rear face-side of each semiconductor element by anisotropic etching, wherein the step of forming the grooves is performed concurrently with the step of forming the depression. 
     
     
         10 . A semiconductor device comprising a notched portion that is continuous with the exception of corners on each side of a rear face of a substrate opposite to a semiconductor element. 
     
     
         11 . The semiconductor device according to  claim 10 , comprising a diaphragm structure provided with a depression on a rear face-side of the semiconductor element.