US2011105000A1PendingUtilityA1
Chemical Mechanical Planarization Pad With Surface Characteristics
Est. expirySep 30, 2029(~3.2 yrs left)· nominal 20-yr term from priority
B24B 37/24B24D 3/346B24D 3/344B24D 3/32
42
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Claims
Abstract
A polishing pad includes a polymer matrix and polyhedral oligomeric silsequioxane (“POSS”) molecules or soluble particles and a surfactant dispersed within the polymer matrix. A polishing pad can be formed by casting a liquid polymer on a conveyer belt having a casting surface with a set of projections and curing the liquid polymer on the conveyer belt such that a polymer matrix has a surface with a second set of projections complimentary to the first set of projections.
Claims
exact text as granted — not AI-modified1 . A polishing pad comprising:
a polymer matrix; and polyhedral oligomeric silsequioxane (“POSS”) molecules dispersed within the polymer matrix.
2 . The polishing pad of claim 1 , wherein the POSS molecules are chemically linked to the polymer matrix.
3 . The polishing pad of claim 1 , wherein the POSS molecules include a functional group, and wherein the functional group is selected from a group consisting of NH 2 , OH, SH, R—NH, —NCO, and COOH.
4 . The polishing pad of claim 1 , wherein the polymer matrix comprises polyurethane.
5 . The polishing pad of claim 1 , wherein the polymer matrix is porous.
6 . The polishing pad of claim 5 , wherein the pores of the polymer matrix are filled with a gas.
7 . The polishing pad of claim 5 , wherein the pores of the polymer matrix comprise 15-40% of the polishing pad by volume.
8 . The polishing pad of claim 1 , wherein the hardness of the polishing pad is between approximately 40 and 75 Shore D.
9 . The polishing pad of claim 1 , wherein the POSS molecules comprise approximately 5 to 15 percent of the polishing pad by weight.
10 . A method of making a polishing pad comprising:
mixing a polymer solution and polyhedral oligomeric silsequioxane (“POSS”) molecules together to form a mix; and curing the mix such that a polymer matrix having POSS particles is formed.
11 . The method of claim 10 , wherein the polymer solution comprises polyurethane.
12 . The method of claim 10 , further comprising bubbling gas through the mix prior to curing.
13 . A polishing pad comprising:
a polymer matrix; soluble particles dispersed within the polymer matrix; and a surfactant dispersed within the polymer matrix.
14 . The polishing pad of claim 13 , wherein the polymer matrix is porous.
15 . The polishing pad of claim 13 , wherein the soluble particles are chosen from a group consisting of CaCO 3 , K 2 SO 4 , phenolic novolac, and polyethylene glycol ether.
16 . The polishing pad of claim 13 , wherein the soluble particles are approximately 1 to 25 micrometers in size.
17 . The polishing pad of claim 13 , wherein the soluble particles comprise approximately 1 to 15% of the polishing pad by weight.
18 . The polishing pad of claim 13 , wherein the polymer matrix comprises polyurethane.
19 . The polishing pad of claim 13 , wherein the surfactant is chosen from a group consisting of copolymers, block copolymers, and nonionic surfactants.
20 . The polishing pad of claim 15 , wherein the hardness of the polishing pad is between approximately 60 and 75 Shore D.
21 . A method of making a polishing pad comprising:
casting a liquid polymer on a conveyer belt, wherein the conveyer belt comprises a casting surface with a first set of projections; and curing the liquid polymer on the conveyer belt such that a polymer matrix is formed, wherein the polymer matrix has a surface with a second set of projections, the second set of projections being complimentary to the first set of projections.
22 . The method of claim 21 , further comprising injecting a gas through the liquid polymer prior to casting.
23 . The method of claim 21 , wherein the casting surface of the conveyer belt comprises a material chosen from a group consisting of stainless steel, Teflon, and silicone.
24 . The method of claim 21 , wherein the polymer comprises polyurethane.Join the waitlist — get patent alerts
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