Semiconductor Device and Manufacturing Method Thereof

Abstract

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

1 - 38 . (canceled) 
     
     
         39 . A method of manufacturing a semiconductor device comprising steps of:
 forming an oxide semiconductor layer by sputtering for at least a channel region of a transistor,   wherein the oxide semiconductor layer comprises an In—Ga—Zn—O based oxide semiconductor material added with at least one element selected from the group consisting of nitrogen, phosphorus, arsenic, antimony, bismuth, fluorine, chlorine, bromine, and iodine.   
     
     
         40 . The method according to  claim 39  wherein the oxide semiconductor layer has a crystalline state. 
     
     
         41 . The semiconductor device according to  claim 39  wherein the oxide semiconductor layer has an amorphous state at least partly. 
     
     
         42 . The semiconductor device according to  claim 39  wherein the oxide semiconductor layer has a state in which both an amorphous structure and a crystalline structure exist. 
     
     
         43 . The method according to  claim 39  wherein the oxide semiconductor layer is formed by sputtering in an oxygen containing atmosphere. 
     
     
         44 . A method of manufacturing a semiconductor device comprising steps of
 forming an oxide semiconductor layer by sputtering for at least a channel region of a transistor; and   heat treating the oxide semiconductor layer to improve crystallinity of the oxide semiconductor layer,   wherein the oxide semiconductor layer comprises an In—Ga—Zn—O based oxide semiconductor material added with at least one element selected from the group consisting of nitrogen, phosphorus, arsenic, antimony, bismuth, fluorine, chlorine, bromine, and iodine.   
     
     
         45 . The method according to  claim 39  wherein the oxide semiconductor layer as formed by sputtering has a crystalline state. 
     
     
         46 . The method according to  claim 39  wherein the oxide semiconductor layer as formed by sputtering has an amorphous state at least partly. 
     
     
         47 . The method according to  claim 39  wherein the oxide semiconductor layer as formed by sputtering has a state in which both an amorphous structure and a crystalline structure exist. 
     
     
         48 . The method according to  claim 39  wherein the oxide semiconductor layer is formed by sputtering in an oxygen containing atmosphere. 
     
     
         49 . A method of manufacturing a semiconductor device comprising steps of:
 forming an oxide semiconductor layer by sputtering for at least a channel region of a transistor,   wherein the oxide semiconductor layer comprises an In—Ga—Zn—O based oxide semiconductor material added with at least nitrogen.   
     
     
         50 . The method according to  claim 49  wherein the oxide semiconductor layer has a crystalline state. 
     
     
         51 . The semiconductor device according to  claim 49  wherein the oxide semiconductor layer has an amorphous state at least partly. 
     
     
         52 . The semiconductor device according to  claim 49  wherein the oxide semiconductor layer has a state in which both an amorphous structure and a crystalline structure exist. 
     
     
         53 . The method according to  claim 49  wherein the oxide semiconductor layer is formed by sputtering in an oxygen containing atmosphere. 
     
     
         54 . A method of manufacturing a semiconductor device comprising steps of:
 forming an oxide semiconductor layer by sputtering for at least a channel region of a transistor; and   heat treating the oxide semiconductor layer to improve crystallinity of the oxide semiconductor layer,   wherein the oxide semiconductor layer comprises an In—Ga—Zn—O based oxide semiconductor material added with at least nitrogen.   
     
     
         55 . The method according to  claim 54  wherein the oxide semiconductor layer as formed by sputtering has a crystalline state. 
     
     
         56 . The method according to  claim 54  wherein the oxide semiconductor layer as formed by sputtering has an amorphous state at least partly. 
     
     
         57 . The method according to  claim 54  wherein the oxide semiconductor layer as formed by sputtering has a state in which both an amorphous structure and a crystalline structure exist. 
     
     
         58 . The method according to  claim 54  wherein the oxide semiconductor layer is formed by sputtering in an oxygen containing atmosphere. 
     
     
         59 . A method of manufacturing a semiconductor device comprising steps of:
 forming an oxide semiconductor layer by sputtering for at least a channel region of a transistor,   wherein the oxide semiconductor layer comprises indium, gallium, zinc and nitrogen.   
     
     
         60 . The method according to  claim 59  wherein the oxide semiconductor layer has a crystalline state. 
     
     
         61 . The semiconductor device according to  claim 59  wherein the oxide semiconductor layer has an amorphous state at least partly. 
     
     
         62 . The semiconductor device according to  claim 59  wherein the oxide semiconductor layer has a state in which both an amorphous structure and a crystalline structure exist. 
     
     
         63 . The method according to  claim 59  wherein the oxide semiconductor layer is formed by sputtering in an oxygen containing atmosphere. 
     
     
         64 . A method of manufacturing a semiconductor device comprising steps of:
 forming an oxide semiconductor layer by sputtering for at least a channel region of a transistor; and   heat treating the oxide semiconductor layer to improve crystallinity of the oxide semiconductor layer,   wherein the oxide semiconductor layer comprises indium, gallium, zinc and nitrogen.   
     
     
         65 . The method according to  claim 64  wherein the oxide semiconductor layer as formed by sputtering has a crystalline state. 
     
     
         66 . The method according to  claim 64  wherein the oxide semiconductor layer as formed by sputtering has an amorphous state at least partly. 
     
     
         67 . The method according to  claim 64  wherein the oxide semiconductor layer as formed by sputtering has a state in which both an amorphous structure and a crystalline structure exist. 
     
     
         68 . The method according to  claim 64  wherein the oxide semiconductor layer is formed by sputtering in an oxygen containing atmosphere. 
     
     
         69 . A method of manufacturing a semiconductor device comprising the steps of:
 forming an oxide semiconductor film including a region to become a channel region, the oxide semiconductor including indium;   patterning the oxide semiconductor film by wet etching; and   heating the oxide semiconductor film at 250° C. or higher.   
     
     
         70 . The method according to  claim 69 , wherein the step of patterning is performed before the step of heating. 
     
     
         71 . The method according to  claim 69 , wherein the step of patterning is performed after the step of heating. 
     
     
         72 . The method according to  claim 69  further comprising a step of fowling an insulating film over the oxide semiconductor film, the insulating film comprising aluminum oxide. 
     
     
         73 . The method according to  claim 69 , wherein the oxide semiconductor film comprises In—Ga—Zn—O based semiconductor material. 
     
     
         74 . The method according to  claim 69 , wherein the oxide semiconductor film is substantially intrinsic. 
     
     
         75 . The method according to  claim 69 , wherein the oxide semiconductor film has crystallinity. 
     
     
         76 . A method of manufacturing a semiconductor device comprising the steps of:
 forming a gate electrode over a substrate;   forming a gate insulating film over the gate electrode;   forming an oxide semiconductor film over the gate insulating film, the oxide semiconductor film including a region to become a channel region, wherein the oxide semiconductor includes indium;   patterning the oxide semiconductor film by wet etching; and   heating the oxide semiconductor film at 250° C. or higher.   
     
     
         77 . The method according to  claim 76 , wherein the step of patterning is performed before the step of heating. 
     
     
         78 . The method according to  claim 76 , wherein the step of patterning is performed after the step of heating. 
     
     
         79 . The method according to  claim 76  further comprising a step of forming an insulating film over the oxide semiconductor film, the insulating film comprising aluminum oxide. 
     
     
         80 . The method according to  claim 76 , wherein the oxide semiconductor film comprises In—Ga—Zn—O based semiconductor material. 
     
     
         81 . The method according to  claim 76 , wherein the oxide semiconductor film is substantially intrinsic. 
     
     
         82 . The method according to  claim 76 , wherein the oxide semiconductor film has crystallinity.