Targets and processes for fabricating same

Abstract

In one embodiment, the present disclosure provides a target or mold having one or more support arms coupled to a substrate. The support arm can be used in handling or positioning a target. In another embodiment, the present disclosure provides target molds, targets produced using such molds, and a method for producing the targets and molds. In various implementations, the targets are formed in a number of disclosed shapes, including a funnel cone, a funnel cone having an extended neck, those having Gaussian-profile, a cup, a target having embedded metal slugs, metal dotted foils, wedges, metal stacks, a Winston collector having a hemispherical apex, and a Winston collector having an apex aperture. In yet another embodiment, the present disclosure provides a target mounting and alignment system.

1 . A target comprising:
 a metal layer;   a substrate; and   a support arm coupled to the metal layer and the substrate.   
     
     
         2 . The target of  claim 1 , wherein the metal layer has a thickness of between about 1 μm and about 20 μm. 
     
     
         3 . The target of  claim 1 , wherein the metal layer has a cross sectional width of less than about 100 μm. 
     
     
         4 . The target of  claim 1 , wherein the metal layer has a cross sectional width of less than about 50 μm. 
     
     
         5 . The target of  claim 1 , wherein the metal layer has a cross sectional width of less than about 25 μm. 
     
     
         6 . The target of  claim 1 , wherein the support arm is one of a plurality of support arms coupled to the metal layer and the substrate. 
     
     
         7 . The target of  claim 1 , wherein the support arm has a cross sectional area of less than about 15 μm 2 . 
     
     
         8 . The target of  claim 1 , wherein the support arm has a cross sectional area of less than about 10 μm 2 . 
     
     
         9 . The target of  claim 1 , wherein the support arm has a cross sectional area of less than about 2 μm 2 . 
     
     
         10 . The target of  claim 1 , wherein the support arm has a cross sectional area of about 1 μm 2 . 
     
     
         11 . A method of forming a laser target comprising:
 applying a silicon nitride layer to the front side of a silicon wafer having front and back sides;   applying a mask layer to the silicon nitride layer;   forming one or more apertures in the mask layer, the apertures defining a support shape;   etching at least a portion of the silicon nitride layer under at least one of the apertures;   removing the mask;   depositing a metal layer on the silicon wafer to form a target shape; and   removing at least a portion of the silicon from the back side of the silicon wafer, wherein the support structure connects the target shape to the silicon wafer.