Semiconductor device structures with dual fin structures and electronic device

Abstract

Fin-FET devices and methods of fabrication are disclosed. The Fin-FET devices include dual fins that may be used to provide a trench region between a source region and a drain region. In some embodiments, the dual fins may be formed by forming a trench with fin structures on opposite sides in a protruding region of a substrate. The dual fins may be useful in forming single-gate, double-gate or triple-gate fin-PET devices. Electronic systems including such fin-FET devices are also disclosed.

1 . A semiconductor device structure, comprising:
 at least one protruding region extending from a surface of a substrate comprising a semiconductor material;   a layer of mask material over the surface of the substrate and outer surfaces of the at least one protruding region; and   a recess extending centrally through the semiconductor material of at least a portion of the at least one protruding region.   
     
     
         2 . The semiconductor device of  claim 1 , wherein the layer of mask material comprises a conductive material. 
     
     
         3 . The semiconductor device of  claim 2 , wherein the conductive material is selected from the group comprising titanium nitride, tungsten nitride, tungsten silicide, titanium silicide, platinum silicide, cobalt silicide, nickel silicide, tungsten, tantalum and tantalum nitride. 
     
     
         4 . The semiconductor device of  claim 2 , further comprising:
 dielectric material between the conductive material and the outer surfaces of the at least one protruding region.   
     
     
         5 . An electronic device, comprising:
 at least one semiconductor device, including:
 a substrate comprising semiconductor material; 
 at least one protruding region extending from an active surface of the substrate; 
 a layer of mask material over the active surface of the substrate and outer surfaces of the at least one protruding region; and 
 a recess extending centrally through the semiconductor material of at least a portion of the at least one protruding region. 
   
     
     
         6 . The electronic device of  claim 5 , wherein the mask material comprises a conductive material. 
     
     
         7 . The electronic device of  claim 6 , further comprising:
 dielectric material between the conductive material and the outer surfaces of the at least one protruding region.   
     
     
         8 . The electronic device of  claim 7 , wherein the dielectric material comprises a gate dielectric and the conductive material comprises at least one gate electrode.