Semiconductor device having wafer-level chip size package

Abstract

A semiconductor device including a semiconductor substrate with circuit elements and electrode pads formed on one surface. The surface is covered by a dielectric layer with openings above the electrode pads. A metal layer is included on the dielectric layer and patterned to form a conductive pattern with traces leading to the electrode pads. A protective layer is included as having openings exposing part of the conductive pattern. Each opening is covered by an electrode such as a solder bump, which is electrically connected through the conductive pattern to one of the electrode pads. The thickness of the protective layer, which may function as a package of the semiconductor device, is thus reduced. The protective layer may be formed from a photosensitive material, simplifying the formation of the openings for the electrodes.

1 : A semiconductor device comprising:
 a semiconductor substrate having a first surface, a second surface opposed to the first surface, and a circuit element formed on the first surface;   an electrode pad disposed on the first surface of the semiconductor substrate, and electrically coupled to the circuit element;   a first conductive pattern overlying the electrode pad, and electrically coupled to the electrode pad;   a protective layer sealing the first-surface side of the semiconductor substrate, and having an opening exposing part of the first conductive pattern;   an interlayer dielectric film disposed below the first conductive pattern and between the protective layer and the first surface of the semiconductor substrate, the interlayer dielectric film having a dielectric nub disposed below said opening in the protective layer and a through hole extending to the electrode pad, the dielectric nub being an upwardly protruding portion of the interlayer dielectric film, and the first conductive pattern extending from the through hole to said opening; and   a bump electrode covering said opening, and electrically coupled to the exposed part of the first conductive pattern through said opening.   
     
     
         2 : The semiconductor device of  claim 1 , wherein the upwardly protruding portion of the interlayer dielectric film is cylindrical. 
     
     
         3 : The semiconductor device of  claim 1 , wherein the interlayer dielectric film is a photosensitive resin. 
     
     
         4 : The semiconductor device of  claim 1 , wherein the protective layer is a photosensitive resin. 
     
     
         5 : The semiconductor device of  claim 1 , further comprising a first metal layer patterned to cover the electrode pad, and disposed between the interlayer dielectric film and the first conductive pattern. 
     
     
         6 : The semiconductor device of  claim 5 , wherein the first conductive pattern is formed by an electro-deposition process using the first metal layer as an electrode. 
     
     
         7 : A semiconductor device comprising;
 a semiconductor substrate having a first surface, a second surface opposed to the first surface, and a circuit element formed on the first surface;   an electrode pad disposed on the first surface of the semiconductor substrate, and electrically coupled to the circuit element;   a first conductive pattern overlying the electrode pad, and electrically coupled to the electrode pad;   a protective layer sealing the first-surface side of the semiconductor substrate, and having an opening exposing part of the first conductive pattern;   an interlayer dielectric film disposed below the first conductive pattern and between the protective layer and the first surface of the semiconductor substrate, the interlayer dielectric film including a first region having a first film thickness, a second region having a second film thickness less than the first film thickness, and a through hole extending to the electrode pad, the first region being located below said opening in the protective layer, the second region being located around the through hole and in the neighborhood of the first region, and the first conductive pattern extending from the through hole to said opening; and   a bump electrode covering said opening, and electrically coupled to the exposed part of the first conductive pattern through said opening.   
     
     
         8 : The semiconductor device of  claim 7 , wherein the first region of the interlayer dielectric film is shaped as a protrusion. 
     
     
         9 : The semiconductor device of  claim 7 , wherein the interlayer dielectric film is a photosensitive resin. 
     
     
         10 : The semiconductor device of  claim 7 , wherein the protective layer is a photosensitive resin. 
     
     
         11 : The semiconductor device of  claim 7 , further comprising a first metal layer patterned to cover the electrode pad, and disposed between the interlayer dielectric film and the first conductive pattern. 
     
     
         12 : The semiconductor device of  claim 11 , wherein the first conductive pattern is formed by an electro-deposition process using the first metal layer as an electrode.