Semiconductor device having fuse and protection circuit

Abstract

A semiconductor device having a semiconductor substrate, an insulating layer, a fuse, a diffusion layer and a resistor. The semiconductor substrate has a first conductivity type. The insulating layer is selectively formed on the surface of the semiconductor substrate. The fuse is formed on the insulating layer. The diffusion layer has a second conductivity type. The diffusion layer is formed on the surface of the semiconductor substrate and electrically connected to the fuse. The first resistor is electrically connected to the fuse.

1 - 13 . (canceled) 
     
     
         14 . A semiconductor device comprising:
 a semiconductor substrate having a first conductivity type and a surface thereof;   an insulating layer selectively formed on the surface of the semiconductor substrate;   a first fuse formed on the insulating layer, the fuse having a first terminal and a second terminal;   a first diffusion layer having a second conductivity type formed on the surface of the semiconductor substrate, the first diffusion layer being electrically connected to the first terminal of the fuse;   a second diffusion layer having the second conductivity type formed on the surface of the semiconductor substrate, the second diffusion layer being electrically connected to the ground;   a gate insulating layer formed on the surface of the substrate, the gate insulating layer formed between the first and second diffusion layer;   a gate electrode formed on the gate insulating layer; and   a first resistor electrically connected to the first terminal of the fuse.   
     
     
         15 . A semiconductor device according to  claim 14 , further comprising,
 a third diffusion layer having the second conductivity type formed on the surface of the semiconductor substrate, the second diffusion layer being electrically connected to the second terminal of the fuse; and   a second resistor electrically connected to the second terminal of the fuse.   
     
     
         16 . A semiconductor device according to  claim 14 , wherein the fuse is formed of polysilicon. 
     
     
         17 . A semiconductor device according to  claim 14 , wherein the first resistor is formed of polysilicon. 
     
     
         18 . A semiconductor device according to  claim 14 , wherein the first resistor is formed of a fourth diffusion layer formed on the surface of the substrate. 
     
     
         19 . (canceled) 
     
     
         20 . A semiconductor device according to  claim 14 , wherein the second terminal of the fuse is connected to the ground. 
     
     
         21 . A semiconductor device according to  claim 14 , wherein the fuse, first diffusion layer and the first fuse are surrounded by a fifth diffusion layer having the first conductivity type and being connected to the ground. 
     
     
         22 . A semiconductor device according to  claim 21 , wherein the second diffusion layer is electrically connected to the fifth diffusion layer. 
     
     
         23 . A semiconductor device according to  claim 14 , wherein the gate electrode is electrically connected to the ground.