Semiconductor light emitting device

Abstract

A semiconductor light emitting device includes a substrate 11 including a group III-V nitride semiconductor; a first-conductivity-type layer 12 formed on the substrate 11 , the first-conductivity-type layer including a plurality of group III-V nitride semiconductor layers of first conductivity type; an active layer 13 formed on the first semiconductor layer 12 ; and a second-conductivity-type layer 14 formed on the active layer 13 , the second-conductivity-type layer including a group III-V nitride semiconductor layer of second conductivity type. The first-conductivity-type layer 12 includes an intermediate layer 23 made of Ga 1-x In x N (0<x<1).

1 - 8 . (canceled) 
     
     
         9 . A semiconductor light emitting device comprising:
 a semiconductor layer made of a group III-V nitride semiconductor;   a first-conductivity-type layer formed on the semiconductor layer, the first-conductivity-type layer including a plurality of group III-V nitride semiconductor layers of first conductivity type;   an active layer formed on the first-conductivity-type layer; and a second-conductivity-type layer formed on the active layer, the second-conductivity-type layer being made of a group III-V nitride semiconductor layer of second conductivity type; wherein   the first-conductivity-type layer includes an intermediate layer made of Ga 1-x In x N (0<x<1),   part of the first-conductivity-type layer, the active layer, and the second-conductivity-type layer form a mesa portion, and   the part of the first-conductivity-type layer which forms the mesa portion is a part excepting at least the intermediate layer.   
     
     
         10 . The semiconductor light emitting device of  claim 9  wherein the intermediate layer has a thickness of 10-100 nm.