Method for the production of multi-stepped substrate

Abstract

A multi-stepped substrate having a plurality of steps is produced by forming, on the principal surface of a substrate, a plurality of masks which are put on top of each other, which differ from each other in the materials used for forming them and which are likewise different, from each other, in the means for peeling off the same; and that the substrate is subjected, in order, to dry-etching operations through the plurality of masks each having a desired shape such that the substrate has a plurality of steps each of which reflects the shape of each corresponding mask.

1 - 11 . (canceled) 
     
     
         12 . A method for the production of a multi-stepped substrate having a plurality of steps which processes a substrate according to the dry-etching process while making use of a plasma, which comprises forming multiple steps on the substrate by forming, on the principal surface of the substrate, a plurality of masks which are put on top of each other, which differ from each other in materials used for forming the masks and which are likewise different, from each other, in a means for peeling off the same; subjecting, in order, the substrate to dry-etching operations, while reflecting a desired shape of each of the plurality of masks. 
     
     
         13 . The method for the production of a multi-stepped substrate as set forth in  claim 12 , wherein each of the plurality of masks is composed of (1) a light-insensitive organic polymer material selected from the group consisting of phenolic resins, epoxy resins, acrylic resins, methacrylic resins, polyimides, and polyureas; (2) a photoresist having light-sensitivity and comprising, as a principal component, an organic polymer material selected from the group consisting of phenolic resins, epoxy resins, acrylic resins, methacrylic resins, polyimides, and polyureas; (3) a material selected from the group consisting of metals such as Cr, Ti, Pt, Au, Ag, Al, Ni, Cu, Fe, Zr and Ta, an alloy of at least two of them, as well as an oxide and a nitride of the metal listed above; or (4) a material selected from the group consisting of semiconductor film-forming materials, oxides and nitrides of the semiconductor film-forming materials, alloys of the semiconductor film-forming materials and tungsten or molybdenum, and SiON. 
     
     
         14 . The method for the production of a multi-stepped substrate as set forth in  claim 12 , wherein one of the masks is composed of a resin. 
     
     
         15 . The method for the production of a multi-stepped substrate as set forth in  claim 12 , wherein one of the masks is composed of a chromium film or an aluminum film. 
     
     
         16 . The method for the production of a multi-stepped substrate as set forth in  claim 14 , wherein one of the masks is composed of a chromium film or an aluminum film. 
     
     
         17 . The method for the production of a multi-stepped substrate as set forth in  claim 12 , wherein the substrate has the surface consisting of silicon, and one of the masks is composed of a silicon oxide film or a silicon nitride film. 
     
     
         18 . The method for the production of a multi-stepped substrate as set forth in  claim 13 , wherein the substrate has the surface consisting of silicon, and one of the masks is composed of a silicon oxide film or a silicon nitride film. 
     
     
         19 . The method for the production of a multi-stepped substrate as set forth in  claim 14 , wherein the substrate has the surface consisting of silicon, and one of the masks is composed of a silicon oxide film or a silicon nitride film. 
     
     
         20 . The method for the production of a multi-stepped substrate as set forth in  claim 15 , wherein the substrate has the surface consisting of silicon, and one of the masks is composed of a silicon oxide film or a silicon nitride film. 
     
     
         21 . The method for the production of a multi-stepped substrate as set forth in  claim 16 , wherein the substrate has the surface consisting of silicon, and one of the masks is composed of a silicon oxide film or a silicon nitride film. 
     
     
         22 . The method for the production of a multi-stepped substrate as set forth in  claim 17 , wherein the silicon oxide film or the silicon nitride film used as one of the masks is formed by the evaporation technique, the physical vapor deposition technique, the chemical vapor deposition technique or the spin coating technique. 
     
     
         23 . The method for the production of a multi-stepped substrate as set forth in  claim 12 , wherein the substrate has the surface consisting of silicon oxide, silicon nitride or SiON, and one of the masks is composed of a silicon film. 
     
     
         24 . The method for the production of a multi-stepped substrate as set forth in  claim 13 , wherein the substrate has the surface consisting of silicon oxide, silicon nitride or SiON, and one of the masks is composed of a silicon film. 
     
     
         25 . The method for the production of a multi-stepped substrate as set forth in  claim 14 , wherein the substrate has the surface consisting of silicon oxide, silicon nitride or SiON, and one of the masks is composed of a silicon film. 
     
     
         26 . The method for the production of a multi-stepped substrate as set forth in  claim 15 , wherein the substrate has the surface consisting of silicon oxide, silicon nitride or SiON, and one of the masks is composed of a silicon film. 
     
     
         27 . A method for the production of a multi-stepped substrate which produces a multi-stepped substrate having a plurality of steps by processing a substrate whose surface is composed of silicon according to the dry etching technique while making use of a plasma, wherein the multi-stepped substrate is produced by forming, on the principal surface of a substrate, a plurality of masks which are put on top of each other, which differ from each other in materials used for forming them, which are likewise different, from each other, in a means for the same and in which one of the plurality of masks is one consisting of a silicon oxide film or a silicon nitride film prepared according to the evaporation technique, the physical vapor deposition technique, the chemical vapor deposition technique or the spin coating technique; and that the substrate is subjected, in order, to dry-etching operations, while reflecting a desired shape of each mask. 
     
     
         28 . The method for the production of a multi-stepped substrate as set forth in  claim 27 , wherein one of the masks is composed of a resin. 
     
     
         29 . A method for the production of a multi-stepped substrate which produces a multi-stepped substrate having a plurality of steps by processing a silicon oxide substrate or a silicon nitride substrate according to the dry etching technique while making use of a plasma, wherein the multi-stepped substrate is produced by forming, on the principal surface of the silicon oxide substrate or the silicon nitride substrate, a plurality of masks which are put on top of each other, which differ from each other in materials used for forming them, which are likewise different, from each other, in a means for peeling the same, and in which one of the plurality of masks is one consisting of a silicon film prepared according to the sputtering technique or the evaporation technique; and that the substrate is subjected, in order, to dry-etching operations, while reflecting a desired shape of each mask. 
     
     
         30 . The method for the production of a multi-stepped substrate as set forth in  claim 29 , wherein one of the masks is composed of a resin.