Nitride semiconductor laser device

Abstract

A nitride semiconductor laser device is formed by growing a group III nitride semiconductor multilayer structure on a substrate containing no Al. The group III nitride semiconductor multilayer structure forms a structure including an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer held between the n-type semiconductor layer and the p-type semiconductor layer. The n-type semiconductor layer includes an n-type cladding layer containing Al and an n-type guide layer having a smaller band gap than the n-type cladding layer. The p-type semiconductor layer includes a p-type cladding layer containing Al and a p-type guide layer having a smaller band gap than the p-type cladding layer. A removal region is formed by partially removing the layers containing Al in the group III nitride semiconductor multilayer structure from the substrate.

1 . A nitride semiconductor laser device formed by growing a group III nitride semiconductor multilayer structure on a substrate containing no Al, wherein
 the group III nitride semiconductor multilayer structure forms a structure including an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer held between the n-type semiconductor layer and the p-type semiconductor layer,   the n-type semiconductor layer includes an n-type cladding layer containing Al and an n-type guide layer having a smaller band gap than the n-type cladding layer,   the p-type semiconductor layer includes a p-type cladding layer containing Al and a p-type guide layer having a smaller band gap than the p-type cladding layer, and   a removal region is formed by partially removing the layers containing Al in the group III nitride semiconductor multilayer structure from the substrate.   
     
     
         2 . The nitride semiconductor laser device according to  claim 1 , having a thickness of not more than 80 μm. 
     
     
         3 . The nitride semiconductor laser device according to  claim 1 , having a cavity length of not more than 300 μm. 
     
     
         4 . The nitride semiconductor laser device according to  claim 1 , having a width of not more than 150 μm. 
     
     
         5 . The nitride semiconductor laser device according to  claim 1 , wherein
 the removal region is a region continuous from one cavity end face to another cavity end face.   
     
     
         6 . The nitride semiconductor laser device according to  claim 1 , wherein
 the removal region is arranged to avoid a cavity region.   
     
     
         7 . The nitride semiconductor laser device according to  claim 1 , wherein
 the removal region is provided on a side edge in a width direction orthogonal to a cavity direction.   
     
     
         8 . The nitride semiconductor laser device according to  claim 1 , wherein
 the removal region is provided on each side edge in a width direction orthogonal to a cavity direction.   
     
     
         9 . The nitride semiconductor laser device according to  claim 1 , wherein
 the removal region is a region provided on a side edge in a width direction orthogonal to a cavity direction and continuous from one cavity end face to another cavity end face.   
     
     
         10 . The nitride semiconductor laser device according to  claim 1 , wherein
 the removal region is a region provided on each side edge in a width direction orthogonal to a cavity direction and continuous from one cavity end face to another cavity end face.   
     
     
         11 . The nitride semiconductor laser device according to  claim 1 , wherein
 the group III nitride semiconductor multilayer structure is removed until the substrate is exposed in the removal region.   
     
     
         12 . The nitride semiconductor laser device according to  claim 11 , wherein
 the substrate is etched up to a prescribed depth in the removal region.