Stacking semiconductor device and production method thereof

Abstract

In a stacking semiconductor device in which a first-layer and a second-layer semiconductor devices are stacked and bonded with a solder, warpage occurs due to a difference in thermal expansion coefficient of constituent members or a difference in elastic modulus of individual members. Therefore, between the first-layer and the second-layer semiconductor devices are provided an external connection terminal of solder and a thermosetting resin, and the stacking semiconductor device is heated at 150 to 180° C., which are the temperatures of preheating for reflow of the solder, for 30 to 90 seconds. Thereby the warpage of the first-layer semiconductor device is reduced and the thermosetting resin is cured completely in this state. Then, the temperature is raised to a reflow temperature of the solder and solder bonding using the external connection terminal is performed. Thereby, the bonding reliability of a solder-bonded portion of the stacking semiconductor device is considerably improved.

1 - 8 . (canceled) 
     
     
         9 . A stacking semiconductor device, comprising:
 a first-layer semiconductor device having a first semiconductor element mounted on a surface thereof; and   a second-layer semiconductor device having a second semiconductor element mounted on a surface thereof, the second-layer semiconductor device being stacked via bonding means on the surface of the first-layer semiconductor device,   wherein the bonding means includes a solder joint in which the first-layer semiconductor device and the second-layer semiconductor device are bonded to each other with a solder, and an adhesion fixing portion in which the first-layer semiconductor device and the second-layer semiconductor device are adhered and fixed to each other with a thermosetting resin having a curing temperature at which the first-layer semiconductor device has a flat shape.   
     
     
         10 . The stacking semiconductor device according to  claim 9 , wherein the thermosetting resin cures completely by heating at a temperature less than a melting temperature of the solder. 
     
     
         11 . The stacking semiconductor device according to  claim 9 , wherein the thermosetting resin cures completely by heating at a temperature of not less than 150° C. but no more than 180° C. for not less than 30 seconds but not more than 90 seconds. 
     
     
         12 . The stacking semiconductor device according to  claim 9 , wherein the thermosetting resin is disposed only on a surface of the first semiconductor element. 
     
     
         13 . The stacking semiconductor device according to  claim 9 , wherein the thermosetting resin is disposed at a plurality of positions on a surface of the first semiconductor element. 
     
     
         14 . The stacking semiconductor device according to  claim 9 , wherein the thermosetting resin is disposed at a central part on a surface of the first semiconductor element.