US2011083606A1PendingUtilityA1

Exhaust gas treatment device for a cvd device, cvd device, and exhaust gas treatment method

Assignee: RUDHARD JOACHIMPriority: Mar 17, 2008Filed: Jan 23, 2009Published: Apr 14, 2011
Est. expiryMar 17, 2028(~1.6 yrs left)· nominal 20-yr term from priority
C23C 16/345C23C 16/4412Y02C20/30
53
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Claims

Abstract

An exhaust gas treatment device for a CVD device for the deposition of silicon-rich nitride in a CVD process, in particular an LPCVD process. An aftertreatment chamber is provided into which ammonia gas can be metered. In addition, a CVD device and an exhaust gas treatment method are described.

Claims

exact text as granted — not AI-modified
1 - 13 . (canceled) 
     
     
         14 . An exhaust gas treatment device for a CVD device for the deposition of silicon-rich nitride in a CVD process, comprising:
 an aftertreatment chamber into which ammonia gas can be metered.   
     
     
         15 . The exhaust gas treatment device as recited in  claim 14 , wherein a quantity of ammonia gas that is to be metered is adjustable in such a way that at least one of stoichiometric nitride is deposited, and an excess of ammonia gas results in the aftertreatment chamber. 
     
     
         16 . The exhaust gas treatment device as recited in  claim 14 , wherein a quantity of ammonia that can be metered can be adjusted as a function of at least one of a flow ratio of the CVD process of dichlorosilane to ammonia gas, a quantity of ammonia gas, and a quantity of dichlorosilane in exhaust gas in the aftertreatment chamber. 
     
     
         17 . The exhaust gas treatment device as recited in  claim 16 , further comprising:
 a logic unit for continuous determination of the quantity of ammonia gas that is to be metered.   
     
     
         18 . The exhaust gas treatment device as recited in  claim 17 , wherein the logic unit is connected in signal-conducting fashion to at least one of: i) at least one dichlorosilane flow quantity meter, ii) at least one dichlorosilane flow quantity controller, iii) an ammonia gas flow quantity meter, and iv) an ammonia gas flow quantity controller. 
     
     
         19 . The exhaust gas treatment device as recited in  claim 17 , wherein the logic unit is a component of a metering ammonia gas flow quantity controller adapted to meter the ammonia gas into the aftertreatment chamber. 
     
     
         20 . The exhaust gas treatment device as recited in  claim 17 , wherein the logic unit is connected in signal-conducting fashion to at least one of an ammonia gas sensor that determines the quantity of ammonia in the exhaust gas of the CVD process in the aftertreatment chamber and a dichlorosilane sensor that determines a quantity of dichlorosilane in the exhaust gas in the aftertreatment chamber. 
     
     
         21 . The exhaust gas treatment device as recited in  claim 17 , further comprising:
 at least one heating device to at least one of heat the aftertreatment chamber and to heat an exhaust gas line leading to a cooling trap for deposition of ammonium chloride at least approximately to a temperature of the CVD process.   
     
     
         22 . A CVD device, comprising:
 a CVD process chamber; and   an exhaust gas treatment device including an aftertreatment chamber into which ammonia gas can be metered.   
     
     
         23 . A method for treating exhaust gas from a CVD process, in which silicon-rich nitride is deposited, comprising:
 metering ammonia gas to the exhaust gas from the CVD process.   
     
     
         24 . The method as recited in  claim 23 , further comprising:
 adjusting a quantity of ammonia gas that can be metered to the exhaust gas in such a way that at least one stoichiometric nitride is deposited, and an excess of ammonia gas results in the exhaust gas.   
     
     
         25 . The method as recited in  claim 23 , further comprising:
 adjusting a quantity of ammonia that can be metered to the exhaust gas as a function of at least one of a flow ratio of dichlorosilane to ammonia gas, a quantity of ammonia gas, and a quantity of dichlorosilane in the exhaust gas of the CVD process in an aftertreatment chamber.   
     
     
         26 . The method as recited in  claim 23 , further comprising:
 heating at least approximately to a temperature of the CVD process at least one of the exhaust gas and the ammonia gas that can be metered to the exhaust gas.

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