US2011081526A1PendingUtilityA1

Patterning of solid state features by direct write nanolithographic printing

Assignee: UNIV NORTHWESTERNPriority: Dec 17, 2001Filed: Oct 5, 2010Published: Apr 7, 2011
Est. expiryDec 17, 2021(expired)· nominal 20-yr term from priority
B82Y 40/00Y10S977/857G03F 7/0002B82Y 10/00B82Y 30/00Y10S977/855Y10T428/24802Y10T428/265B82B 3/00Y10T428/24926G03F 7/00
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Claims

Abstract

The present invention includes a method of fabricating organic/inorganic composite nanostructures on a substrate comprising depositing a solution having a block copolymer and an inorganic precursor on the substrate using dip pen nanolithography. The nanostructures comprises arrays of lines and/or dots having widths/diameters less than 1 micron. The present invention also includes a device comprising an organic/inorganic composite nanoscale region chemically bonded to a substrate, wherein the nanoscale region, wherein the nanoscale region has a nanometer scale dimension other than height.

Claims

exact text as granted — not AI-modified
1 - 39 . (canceled) 
     
     
         40 . A method of nanolithography comprising patterning a nanoscopic deposit comprising a solid state material precursor on a substrate, and converting the solid state material precursor to the solid state material. 
     
     
         41 . The method according to  claim 40 , wherein the solid state material is an oxide. 
     
     
         42 . (canceled) 
     
     
         43 . The method according to  claim 40 , wherein the solid state material is mesoporous. 
     
     
         44 - 45 . (canceled) 
     
     
         46 . The method according to  claim 40 , wherein the nanoscopic deposit has at least one dimension which is less than about 200 nm. 
     
     
         47 . The method according to  claim 40 , wherein the converting is carried out by heating. 
     
     
         48 - 49 . (canceled) 
     
     
         50 . The method according to  claim 40 , wherein the solid state material precursor is a sol. 
     
     
         51 . The method according to  claim 50 , wherein the nanoscopic deposit is a dot. 
     
     
         52 - 53 . (canceled) 
     
     
         54 . The method according to  claim 50 , wherein the substrate is silicon or silicon oxide. 
     
     
         55 . A method of fabricating inorganic/organic nanostructures comprising depositing an ink on a substrate by direct write nanolithography to form a deposit, wherein the ink comprises an inorganic precursor and at least one organic polymer. 
     
     
         56 . (canceled) 
     
     
         57 . The method according to  claim 55 , wherein the inorganic precursor is a metal oxide precursor. 
     
     
         58 . The method according to  claim 55 , wherein the organic polymer is an amphiphilic polymer. 
     
     
         59 . The method according to  claim 55 , wherein the deposit is heated. 
     
     
         60 . The method according to  claim 55 , wherein the deposit has at least one lateral dimension of about 1,000 nm or less. 
     
     
         61 - 69 . (canceled) 
     
     
         70 . A nanoscopically patterned substrate comprising on the substrate surface at least one deposit prepared by the method according to  claim 40 . 
     
     
         71 - 87 . (canceled) 
     
     
         88 . A device comprising:
 a substrate,   at least one nanostructure on the substrate prepared by direct-write nanolithographic printing, the nanostructure having at least one lateral dimension of about 1,000 nm or less and comprising metal oxide precursor or metal oxide.   
     
     
         89 - 90 . (canceled) 
     
     
         91 . The device according to  claim 88 , wherein the nanostructure comprises an organic/inorganic composite. 
     
     
         92 . (canceled) 
     
     
         93 . The device according to  claim 88 , wherein the nanostructure comprises a sol-gel structure. 
     
     
         94 - 98 . (canceled) 
     
     
         99 . The device according to  claim 88 , wherein the lateral dimension is about 500 nm or less. 
     
     
         100 - 102 . (canceled) 
     
     
         103 . The device according to  claim 88 , wherein the nanostructure comprises a catalyst for the growth of larger structures. 
     
     
         104 . The device according to  claim 88 , wherein the nanostructure comprises a wave guide material. 
     
     
         105 - 142 . (canceled)

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