US2011081526A1PendingUtilityA1
Patterning of solid state features by direct write nanolithographic printing
Est. expiryDec 17, 2021(expired)· nominal 20-yr term from priority
B82Y 40/00Y10S977/857G03F 7/0002B82Y 10/00B82Y 30/00Y10S977/855Y10T428/24802Y10T428/265B82B 3/00Y10T428/24926G03F 7/00
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Claims
Abstract
The present invention includes a method of fabricating organic/inorganic composite nanostructures on a substrate comprising depositing a solution having a block copolymer and an inorganic precursor on the substrate using dip pen nanolithography. The nanostructures comprises arrays of lines and/or dots having widths/diameters less than 1 micron. The present invention also includes a device comprising an organic/inorganic composite nanoscale region chemically bonded to a substrate, wherein the nanoscale region, wherein the nanoscale region has a nanometer scale dimension other than height.
Claims
exact text as granted — not AI-modified1 - 39 . (canceled)
40 . A method of nanolithography comprising patterning a nanoscopic deposit comprising a solid state material precursor on a substrate, and converting the solid state material precursor to the solid state material.
41 . The method according to claim 40 , wherein the solid state material is an oxide.
42 . (canceled)
43 . The method according to claim 40 , wherein the solid state material is mesoporous.
44 - 45 . (canceled)
46 . The method according to claim 40 , wherein the nanoscopic deposit has at least one dimension which is less than about 200 nm.
47 . The method according to claim 40 , wherein the converting is carried out by heating.
48 - 49 . (canceled)
50 . The method according to claim 40 , wherein the solid state material precursor is a sol.
51 . The method according to claim 50 , wherein the nanoscopic deposit is a dot.
52 - 53 . (canceled)
54 . The method according to claim 50 , wherein the substrate is silicon or silicon oxide.
55 . A method of fabricating inorganic/organic nanostructures comprising depositing an ink on a substrate by direct write nanolithography to form a deposit, wherein the ink comprises an inorganic precursor and at least one organic polymer.
56 . (canceled)
57 . The method according to claim 55 , wherein the inorganic precursor is a metal oxide precursor.
58 . The method according to claim 55 , wherein the organic polymer is an amphiphilic polymer.
59 . The method according to claim 55 , wherein the deposit is heated.
60 . The method according to claim 55 , wherein the deposit has at least one lateral dimension of about 1,000 nm or less.
61 - 69 . (canceled)
70 . A nanoscopically patterned substrate comprising on the substrate surface at least one deposit prepared by the method according to claim 40 .
71 - 87 . (canceled)
88 . A device comprising:
a substrate, at least one nanostructure on the substrate prepared by direct-write nanolithographic printing, the nanostructure having at least one lateral dimension of about 1,000 nm or less and comprising metal oxide precursor or metal oxide.
89 - 90 . (canceled)
91 . The device according to claim 88 , wherein the nanostructure comprises an organic/inorganic composite.
92 . (canceled)
93 . The device according to claim 88 , wherein the nanostructure comprises a sol-gel structure.
94 - 98 . (canceled)
99 . The device according to claim 88 , wherein the lateral dimension is about 500 nm or less.
100 - 102 . (canceled)
103 . The device according to claim 88 , wherein the nanostructure comprises a catalyst for the growth of larger structures.
104 . The device according to claim 88 , wherein the nanostructure comprises a wave guide material.
105 - 142 . (canceled)Join the waitlist — get patent alerts
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