US2011073921A1PendingUtilityA1

Semiconductor device and manufacturing method of the same

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Assignee: RENESAS ELECTRONICS CORPPriority: Dec 14, 2007Filed: Dec 7, 2010Published: Mar 31, 2011
Est. expiryDec 14, 2027(~1.4 yrs left)· nominal 20-yr term from priority
Inventors:Hideaki TamimotoTakumi SobaToru UeguriKazuo Kudo
H10W 99/00H10W 90/766H10W 90/756H10W 90/736H10W 74/00H10W 72/07653H10W 72/07633H10W 72/07533H10W 72/07337H10W 72/07336H10W 72/07141H10W 72/5524H10W 72/5522H10W 72/5363H10W 72/952H10W 72/932H10W 72/926H10W 72/884H10W 72/871H10W 72/853H10W 72/652H10W 72/631H10W 72/536H10W 72/534H10W 72/352H10W 72/325H10W 72/075H10W 72/073H10W 72/59H10W 72/0711H10W 72/0198H10W 72/60H10W 72/019H10W 70/466H10W 70/481
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Claims

Abstract

The bonding time of a metallic ribbon is shortened in the semiconductor device which connects a lead frame with the bonding pad of a semiconductor chip with a metallic ribbon. The bottom of the wedge tool is divided into two by the V-groove at the first branch and the second branch. In order to do bonding of the Al ribbon to the source pad of the silicon chip, and the source post of the lead frame, first, the first branch and second branch of the wedge tool are contacted by pressure to Al ribbon on the source pad, and supersonic vibration is applied to it. Subsequently, the first branch is contacted by pressure to Al ribbon on the source post, and supersonic vibration is applied to it. Here, since the width of the first branch is narrower than the width of the source post, Al ribbon is not joined at the end surface of the width direction of the source post.

Claims

exact text as granted — not AI-modified
1 - 15 . (canceled) 
     
     
         16 . A semiconductor device, comprising:
 a chip mounting portion having an obverse surface, and a reverse surface opposite the obverse surface;   a semiconductor chip having a front surface, a back surface opposite the front surface, and a first electrode formed over the front surface, the semiconductor chip being mounted over the obverse surface of the chip mounting portion;   a first lead arranged near the chip mounting portion;   a belt-like connection material electrically connecting the first electrode and the first lead; and   a sealing body sealing the semiconductor chip and a part of the first lead;   wherein a size of a connection area of the first electrode and the belt-like connection material is different from a size of a connection area of the first lead and the belt-like connection material.   
     
     
         17 . A semiconductor device according to  claim 16 ,
 wherein the connection area of the first electrode and the belt-like connection material has a first connection portion and a second connection portion,   wherein the connection area of the first lead and the belt-like connection material has a third connection portion, and   wherein an area of the first connection portion is equal to an area of the third connection portion.   
     
     
         18 . A semiconductor device according to  claim 17 ,
 wherein a distance from the first connection portion to the first lead is greater than a distance from the second connection portion to the first lead.   
     
     
         19 . A semiconductor device according to  claim 17 ,
 wherein an area of the second connection portion is larger than an area of the first connection portion.   
     
     
         20 . A semiconductor device according to  claim 17 ,
 wherein a total width of the first and the second connection portions is smaller than a width of the first electrode in a direction toward the first lead from the semiconductor chip.   
     
     
         21 . A semiconductor device according to  claim 17 ,
 wherein the first lead has a first lead post, the belt-like connection material connecting with the first lead post, and   wherein a width of the third connection portion is smaller than a width of the first lead post in a direction toward the first lead from the semiconductor chip.   
     
     
         22 . A semiconductor device according to  claim 17 ,
 wherein a space is formed between the first connection portion and the second connection portion.   
     
     
         23 . A semiconductor device according to  claim 22 ,
 wherein the space is filled with a portion of the sealing body.   
     
     
         24 . A semiconductor device according to  claim 16 ,
 wherein the belt-like connection material is a metallic ribbon.   
     
     
         25 . A semiconductor device according to  claim 24 , wherein the metallic ribbon includes Al. 
     
     
         26 . A semiconductor device according to  claim 16 ,
 wherein the belt-like connection material is a plurality of metallic ribbons.   
     
     
         27 . A semiconductor device according to  claim 16 , further comprising:
 a second lead arranged near the chip mounting portion;   a third lead coupled to the chip mounting portion;   a second electrode formed on the front surface of the semiconductor chip; and   a third electrode formed on the back surface of the semiconductor chip;   wherein the second electrode connects with the second lead using Au wire.   
     
     
         28 . A semiconductor device according to  claim 27 ,
 wherein the semiconductor chip is mounted over the obverse surface of the chip mounting portion with Ag paste.   
     
     
         29 . A semiconductor device according to  claim 27 ,
 wherein an area of the first electrode is larger than an area of the second electrode.   
     
     
         30 . A semiconductor device according to  claim 27 ,
 wherein the sealing body has a first side surface and a second side surface face opposite the first side surface, and   wherein the first and the second leads are exposed from the first side surface, and the third lead is exposed from the second side surface.   
     
     
         31 . A semiconductor device according to  claim 27 ,
 wherein a power MOSFET is formed in the semiconductor chip, and   wherein the first electrode is a source electrode, the second electrode is a gate electrode, and the third electrode is a drain electrode.   
     
     
         32 . A semiconductor device, comprising:
 a chip mounting portion having an obverse surface, and a reverse surface opposite the obverse surface;   a semiconductor chip having a front surface, a back surface opposite the front surface, and a first electrode formed over the front surface, the semiconductor chip being mounted over the obverse surface of the chip mounting portion;   a first lead arranged near the chip mounting portion;   a belt-like connection material electrically connecting the first electrode and the first lead; and   a sealing body sealing the semiconductor chip and a portion of the first lead;   wherein a connection portion of the first electrode and the belt-like connection material has a first connection portion and a second connection portion,   wherein a connection portion of the first lead and the belt-like connection material has a third connection portion, and   wherein an area of the first connection portion is equal to an area of the third connection portion.   
     
     
         33 . A semiconductor device according to  claim 32 ,
 wherein the second connection portion is positioned between the first and the third connection portions.

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