Method and device to vary growth rate of thin films over semiconductor structures

Abstract

Methods and devices for controlling a growth rate of films in semiconductor structures are shown. Chemical vapor deposition methods and devices include the use of a reaction inhibitor that selectively varies a deposition rate along a surface. One specific method includes atomic layer deposition. One method shown provides high step coverage over features such as trenches in trench plate capacitors. Also shown are methods and devices to provide uniform batch reactor layer thicknesses. Also shown are methods for forming alloy layers with high control over composition. Also shown are methods to selectively control growth rate to provide growth only on selected surfaces.

What is claimed is: 
     
         1 . A chemical vapor deposition system, comprising:
 a reaction chamber;   a gas inlet port and a gas outlet port connected to the reaction chamber;   a number of gas supply connections including:
 a chemical precursor gas connection; 
 a reactant gas connection; 
 a surface reaction controlling gas connection; and 
   gas flow control circuitry to introduce an amount of the reaction controlling gas during a deposition process, to inhibit an amount of chemical precursor gas attached to a surface of a semiconductor wafer.   
     
     
         2 . The chemical vapor deposition system of  claim 1 , wherein the chemical precursor gas connection includes a halide precursor gas connection, and the surface reaction controlling gas connection includes a halide reaction controlling gas connection. 
     
     
         3 . The chemical vapor deposition system of  claim 1 , wherein the chemical precursor gas connection includes an amide precursor gas connection, and the surface reaction controlling gas connection includes an amide reaction controlling gas connection. 
     
     
         4 . The chemical vapor deposition system of  claim 1 , wherein the reactant gas connection includes an oxidizing reactant gas connection. 
     
     
         5 . The chemical vapor deposition system of  claim 4 , wherein the oxidizing reactant gas connection includes a water vapor reactant gas connection. 
     
     
         6 . The chemical vapor deposition system of  claim 4 , wherein the oxidizing reactant gas connection includes an ozone reactant gas connection. 
     
     
         7 . The chemical vapor deposition system of  claim 4 , wherein the reactant gas connection includes a nitriding reactant gas connection. 
     
     
         8 . An atomic layer deposition system, comprising:
 a reaction chamber;   a gas inlet port and a gas outlet port connected to the reaction chamber;   a number of gas supply connections including:
 a chemical precursor gas connection; 
 a reactant gas connection; 
 a surface reaction controlling gas connection; 
   gas flow control circuitry to introduce an amount of the reaction controlling gas during a deposition process, to inhibit an amount of chemical precursor gas attached to a surface of a semiconductor wafer; and   a purging system connected to the reaction chamber to remove gasses from the reaction chamber between selected operations of a deposition process.   
     
     
         9 . The atomic layer deposition system of  claim 8 , wherein the reactant gas connection includes an oxidizing reactant gas connection. 
     
     
         10 . The atomic layer deposition system of  claim 8 , wherein the reactant gas connection includes a nitriding reactant gas connection. 
     
     
         11 . The atomic layer deposition system of  claim 8 , wherein the purging system includes an inert gas introduction system. 
     
     
         12 . The atomic layer deposition system of  claim 8 , wherein the purging system includes a reaction chamber evacuation system. 
     
     
         13 . The atomic layer deposition system of  claim 8 , wherein the reaction chamber includes a multiple wafer reaction chamber. 
     
     
         14 . The atomic layer deposition system of  claim 8 , wherein introduction of reaction controlling gas reduces material buildup on walls of the reaction chamber. 
     
     
         15 . A deposition system, comprising:
 a reaction chamber;   a gas inlet port and a gas outlet port connected to the reaction chamber;   a number of gas supply connections including:
 a metal halide precursor gas connection; 
 an oxidizing gas connection; 
 a HCL based controlling gas connection; 
   gas flow control circuitry to introduce an amount of the HCL based controlling gas during a deposition process, to inhibit an amount of metal halide precursor gas attached to a surface of a semiconductor wafer.   
     
     
         16 . The deposition system of  claim 15 , wherein the oxidizing gas connection includes a water vapor connection. 
     
     
         17 . The deposition system of  claim 15 , wherein the oxidizing gas connection includes an ozone connection. 
     
     
         18 . The deposition system of  claim 15 , wherein the metal halide precursor gas connection includes a HfCl 4  gas connection. 
     
     
         19 . The deposition system of  claim 15 , further including a purging system connected to the reaction chamber to remove gasses from the reaction chamber between selected operations of a deposition process.