Method of manufacturing semiconductor device and semiconductor device

Abstract

A semiconductor device includes a capacitor provided above a substrate including electrodes and a ferroelectric film provided therebetween, a pad electrode electrically connected to one of the electrodes of the capacitor, the pad electrode being formed above the substrate, the pad electrode having a recess on a surface of the substrate, a protective film covering a part of the pad electrode other than the recess on the exposed surface, and a hydrogen absorbing film on the protective film and the recess of the pad electrode.

1 . A semiconductor device comprising:
 a capacitor provided above a substrate including electrodes and a ferroelectric film provided therebetween;   a pad electrode electrically connected to one of the electrodes of the capacitor, the pad electrode being formed above the substrate, the pad electrode having a recess on a surface of the substrate;   a protective film covering a part of the pad electrode other than the recess on the exposed surface; and   a hydrogen absorbing film on the protective film and the recess of the pad electrode.   
     
     
         2 . The semiconductor device according to  claim 1 , wherein the pad electrode has a first conductive film including a TiN film, a conductive pad having a recess at the opening and a flat region over the first conductive film, and a second conductive film including a TiN film and formed on the flat region over the conductive pad. 
     
     
         3 . The semiconductor device according to  claim 1 , wherein the pad electrode has a first conductive film including a TiN film, a first conductive pad over the first conductive film, a second conductive film including a TiN film over the first conductive pad, a second conductive pad over the second conductive film, a third conductive film including a TiN film over the second conductive pad, and the pad electrode has a recess at the opening through which the second conductive pad and the second conductive film are exposed. 
     
     
         4 . The semiconductor device according to  claim 1 , further comprising a hydrogen absorbing film covering a portion over the capacitor, the hydrogen absorbing film being separated from the pad electrode. 
     
     
         5 . The semiconductor device according to  claim 1 , wherein the protective film includes a Ti film in contact with a topmost surface of the Al film or the Al alloy film. 
     
     
         6 . The semiconductor device according to  claim 1 , further comprising a conductive capacitor protective film including a body of the first conductive film or the second conduct film, the conductive capacitor protective film extending on the protective film provided over the capacitor while the conductive capacitor protective film is electrically isolated from the protective film. 
     
     
         7 . The semiconductor device according to  claim 1 , further comprising a stud bump or a bonding wire connected to the pad electrode via the protective film.