Film Wrapped NFET Nanowire

Abstract

A semiconductor structure includes an n-channel field effect transistor (NFET) nanowire, the NFET nanowire comprising a film wrapping around a core of the NFET nanowire, the film wrapping configured to provide tensile stress in the NFET nanowire. A method of making a semiconductor structure includes growing a film wrapping around a core of an n-channel field effect transistor (NFET) nanowire of the semiconductor structure, the film wrapping being configured to provide tensile stress in the NFET nanowire.

1 . A semiconductor structure, comprising:
 an n-channel field effect transistor (NFET) nanowire, the NFET nanowire comprising a film wrapping around a core of the NFET nanowire, the film wrapping configured to provide tensile stress in the NFET nanowire.   
     
     
         2 . The semiconductor structure of  claim 1 , further comprising a p-channel field effect transistor (PFET) nanowire. 
     
     
         3 . The semiconductor structure of  claim 2 , wherein the PFET nanowire comprises silicon (Si). 
     
     
         4 . The semiconductor structure of  claim 1 , wherein the NFET nanowire core comprises silicon germanium (SiGe). 
     
     
         5 . The semiconductor structure of  claim 1 , wherein the NFET nanowire has a cross-sectional area of about 20 nanometers (nm) by about 20 nanometers or less. 
     
     
         6 . The semiconductor structure of  claim 1 , wherein the film wrapping comprises silicon (Si). 
     
     
         7 . The semiconductor structure of  claim 1 , wherein the film wrapping thickness is between about 1 nanometer (nm) and 2 nm. 
     
     
         8 . A method of making a semiconductor structure, the method comprising:
 growing a film wrapping around a core of an n-channel field effect transistor (NFET) nanowire of the semiconductor structure, the film wrapping being configured to provide tensile stress in the NFET nanowire.   
     
     
         9 . The method of  claim 8 , further comprising masking a p-channel field effect transistor (PFET) nanowire of the semiconductor structure while growing the film wrapping. 
     
     
         10 . The method of  claim 9 , wherein the PFET nanowire comprises silicon (Si). 
     
     
         11 . The method of  claim 8 , wherein the NFET nanowire core comprises silicon germanium (SiGe). 
     
     
         12 . The method of  claim 8 , wherein the NFET nanowire has a cross-sectional area of about 20 nanometers (nm) by about 20 nanometers or less. 
     
     
         13 . The method of  claim 8 , wherein the film wrapping comprises silicon (Si) of a thickness between about 1 nanometer (nm) and 2 nm. 
     
     
         14 . The method of  claim 8 , further comprising thickening a p-channel field effect transistor (PFET) nanowire of the semiconductor structure while growing the film wrapping.