Anthanthrene based compound and semiconductor device

Abstract

An anthanthrene based compound of the structural formula (1) is disclosed: wherein X represents an element of the Group 16; n represents an integer of from 0 to 20; m represents an integer of from 1 to 9; a bonding position in the A segment to the B segment, a bonding position in the B segment to the A segment, a bonding position in the B segment to the C segment, and a bonding position in the C segment to the B segment are at least one of from the 1-position to the 5-position and from the 7-position to the 11-position; and each of substituents R 1 , R 2 , R 3 , R 4 , R 5 , R 7 , R 8 , R 9 , R 10 and R 11 independently represents, for example, a substituent of one member selected from the group consisting of a hydrogen atom, an alkyl group, an aryl group, an arylalkyl group and the like.

1 . An anthanthrene based compound represented by the following structural formula (1): 
       
         
           
           
               
               
           
         
         wherein
 X represents an element belonging to the Group 16; 
 n represents an integer of from 0 to 20; 
 m represents an integer of from 1 to 9; 
 
         a bonding position in the A segment to the B segment is at least one of from the 1-position to the 5-position and from the 7-position to the 11-position; 
         a bonding position in the B segment to the A segment is at least one of from the 1-position to the 5-position and from the 7-position to the 11-position; 
         a bonding position in the B segment to the C segment is at least one of from the 1-position to the 5-position and from the 7-position to the 11-position; 
         a bonding position in the C segment to the B segment is at least one of from the 1-position to the 5-position and from the 7-position to the 11-position; and 
         each of substituents R 1 , R 2 , R 3 , R 4 , R 5 , R 7 , R 8 , R 9 , R 10  and R 11  independently represents a substituent of one member selected from the group consisting of a hydrogen atom, an alkyl group, a cycloalkyl group, an alkenyl group, an alkynyl group, an aryl group, an arylalkyl group, an aromatic heterocyclic ring, a heterocyclic group, an alkoxy group, a cycloalkoxy group, an aryloxy group, an alkylthio group, a cycloalkylthio group, an arylthio group, an alkoxycarbonyl group, an aryloxycarbonyl group, a sulfamoyl group, an acyl group, an acyloxy group, an amide group, a carbamoyl group, a ureido group, a sulfinyl group, an alkylsulfonyl group, an arylsulfonyl group, an amino group, a halogen atom, a fluorinated hydrocarbon group, a cyano group, a nitro group, a hydroxyl group, a mercapto group and a silyl group. 
       
     
     
         2 . The anthanthrene based compound according to  claim 1 , wherein
 each of the substituents R 1 , R 2 , R 3 , R 4 , R 5 , R 7 , R 8 , R 9 , R 10  and R 11  independently represents a substituent selected from the group consisting of an alkyl group, an alkenyl group, an aryl group, an arylalkyl group, an aromatic heterocyclic ring and a halogen atom.   
     
     
         3 . The anthanthrene based compound according to  claim 1 , wherein
 X is an oxygen element.   
     
     
         4 . An anthanthrene based compound represented by the following structural formula (2): 
       
         
           
           
               
               
           
         
         wherein
 X represents an element belonging to the Group 16; 
 each of [Y] and [Z] independently represents a functional group of one member selected from the group consisting of an alkyl group, a cycloalkyl group, an alkenyl group, an alkynyl group, an aryl group, an arylalkyl group, an aromatic heterocyclic ring, a heterocyclic group, an alkoxy group, a cycloalkoxy group, an aryloxy group, an alkylthio group, a cycloalkylthio group, an arylthio group, an alkoxycarbonyl group, an aryloxycarbonyl group, a sulfamoyl group, an acyl group, an acyloxy group, an amide group, a carbamoyl group, a ureido group, an sulfinyl group, an alkylsulfonyl group, an arylsulfonyl group, an amino group, a fluorinated hydrocarbon group, a cyano group, a nitro group, a hydroxyl group, a mercapto group and a silyl group; 
 n represents an integer of from 0 to 20; 
 m represents an integer of from 1 to 9; 
 a bonding position in the A segment to [Y] is at least one of from the 1-position to the 5-position and from the 7-position to the 11-position; 
 a bonding position in the B segment to [Y] is at least one of from the 1-position to the 5-position and from the 7-position to the 11-position; 
 a bonding position in the B segment to [Z] is at least one of from the 1-position to the 5-position and from the 7-position to the 11-position; 
 a bonding position in the C segment to [Z] is at least one of from the 1-position to the 5-position and from the 7-position to the 11-position; and 
 each of substituents R 1 , R 2 , R 3 , R 4 , R 5 , R 7 , R 8 , R 9 , R 10  and R 11  independently represents a substituent of one member selected from the group consisting of a hydrogen atom, an alkyl group, a cycloalkyl group, an alkenyl group, an alkynyl group, an aryl group, an arylalkyl group, an aromatic heterocyclic ring, a heterocyclic group, an alkoxy group, a cycloalkoxy group, an aryloxy group, an alkylthio group, a cycloalkylthio group, an arylthio group, an alkoxycarbonyl group, an aryloxycarbonyl group, a sulfamoyl group, an acyl group, an acyloxy group, an amide group, a carbamoyl group, a ureido group, a sulfinyl group, an alkylsulfonyl group, an arylsulfonyl group, an amino group, a halogen atom, a fluorinated hydrocarbon group, a cyano group, a nitro group, a hydroxyl group, a mercapto group and a silyl group. 
 
       
     
     
         5 . The anthanthrene based compound according to  claim 4 , wherein
 each of the substituents R 1 , R 2 , R 3 , R 4 , R 5 , R 7 , R 8 , R 9 , R 10  and R 11  independently represents a substituent selected from the group consisting of an alkyl group, an alkenyl group, an aryl group, an arylalkyl group, an aromatic heterocyclic ring and a halogen atom.   
     
     
         6 . The anthanthrene based compound according to  claim 4 , wherein
 X is an oxygen element.   
     
     
         7 . A semiconductor device comprising:
 a substrate having thereon a gate electrode,   a gate insulating layer,   source/drain electrodes, and   a channel-forming region, wherein   the channel-forming region is composed of a anthanthrene based compound wherein   X represents an element belonging to the Group 16;   n represents an integer of from 0 to 20;   m represents an integer of from 1 to 9;   a bonding position in the A segment to the B segment is at least one of from the 1-position to the 5-position and from the 7-position to the 11-position;   a bonding position in the B segment to the A segment is at least one of from the 1-position to the 5-position and from the 7-position to the 11-position;   a bonding position in the B segment to the C segment is at least one of from the 1-position to the 5-position and from the 7-position to the 11-position;   a bonding position in the C segment to the B segment is at least one of from the 1-position to the 5-position and from the 7-position to the 11-position; and   each of substituents R 1 , R 2 , R 3 , R 4 , R 5 , R 7 , R 8 , R 9 , R 10  and R 11  independently represents a substituent of one member selected from the group consisting of a hydrogen atom, an alkyl group, a cycloalkyl group, an alkenyl group, an alkynyl group, an aryl group, an arylalkyl group, an aromatic heterocyclic ring, a heterocyclic group, an alkoxy group, a cycloalkoxy group, an aryloxy group, an alkylthio group, a cycloalkylthio group, an arylthio group, an alkoxycarbonyl group, an aryloxycarbonyl group, a sulfamoyl group, an acyl group, an acyloxy group, an amide group, a carbamoyl group, a ureido group, a sulfinyl group, an alkylsulfonyl group, an arylsulfonyl group, an amino group, a halogen atom, a fluorinated hydrocarbon group, a cyano group, a nitro group, a hydroxyl group, a mercapto group and a silyl group.   
     
     
         8 . A semiconductor device comprising:
 a substrate having thereon
 a gate electrode, 
 a gate insulating layer, 
 source/drain electrodes, and 
 a channel-forming region, wherein 
   the channel-forming region is composed of the anthanthrene based compound according to  claim 4 .   
     
     
         9 . The semiconductor device according to  claim 7 , wherein
 each of the substituents R 1 , R 2 , R 3 , R 4 , R 5 , R 7 , R 8 , R 9 , R 10  and R 11  independently represents a substituent selected from the group consisting of an alkyl group, an alkenyl group, an aryl group, an arylalkyl group, an aromatic heterocyclic ring and a halogen atom.   
     
     
         10 . The semiconductor device according to  claim 7 , wherein
 X is an oxygen element.