Sputtering apparatus and recording medium for recording control program thereof

Abstract

Disclosed is a sputtering device wherein a target ( 2 ) is disposed offset with respect to a substrate ( 7 ), wherein said sputtering device can ensure a uniform amount of deposition, even when a substrate support holder ( 6 ) has a low number of rotations of several rotations to several tens of rotations, and the amount of deposition is extremely small, such as a film thickness of 1 nm or less. A control unit ( 11 ) is provided to perform control using input of the values of a total whole number of rotations N and a fractional number of rotations α such that X=N+α (where N is the total whole number of rotations and is a positive whole number, and α is the fractional number of rotations and is a positive pure decimal) and, by input of the value of a deposition time T such that the rotational velocity V (rps) of the aforementioned substrate support holder ( 6 ) satisfies V·T=N+α when the total number of rotations of the aforementioned substrate support holder ( 6 ) is X, during the deposition time of T (seconds) for particles sputtered onto the surface of the aforementioned substrate ( 7 ) where a film is to be formed.

1 . A sputtering apparatus, comprising a sputtering cathode for supporting a target and a substrate support holder for supporting a substrate, which are disposed to have a vertical line running through the center point of the target and a vertical line running through the center point of the substrate mismatched with each other among vertical lines to a plane including a film forming surface of the substrate, and the substrate support holder being rotatable on a rotating axis which is perpendicular to the film forming surface of the substrate, wherein:
 the sputtering apparatus has a control unit for controlling a rotational velocity V (rps) of the substrate support holder in a range of 0.016 to 3.5 rps to satisfy:
     V·T=N+α,    
   
       by inputting the value of a deposition time T in a range of 1 to 400 seconds and the values of a total whole number of rotations N in a range of 1 to 100 and a fractional number of rotations α in a range of 0.2 to 0.8, which are expressed as:
     X=N +α (where,  N  denotes a total whole number of rotations which is a positive integer, and a denotes a fractional number of rotations which is a positive pure decimal)
 
 
       when it is determined that a total number of rotations of the substrate support holder is X during the deposition time T (seconds) of sputtering particles onto the film forming surface of the substrate. 
     
     
         2 . (canceled) 
     
     
         3 . (canceled) 
     
     
         4 . The sputtering apparatus according to  claim 1 , further comprising a power supply unit for supplying power to the sputtering cathode, wherein the deposition time T is a time from the start to end of supplying the power from the power supply unit to the sputtering cathode. 
     
     
         5 . The sputtering apparatus according to  claim 1 , further comprising a power supply unit for supplying power to the sputtering cathode and an openable/closable shutter disposed between the sputtering cathode and the substrate support holder, wherein the deposition time T is a time when the power is supplied from the power supply unit to the sputtering cathode and the shutter is open. 
     
     
         6 . A recording medium on which recorded is a program for controlling a rotational velocity V (rps) of a substrate support holder of a sputtering apparatus which has a sputtering cathode for supporting a target and the substrate support holder for supporting a substrate, which are disposed to have a vertical line running through the center point of the target and a vertical line running through the center point of the substrate mismatched with each other among vertical lines with respect to a plane including a film forming surface of the substrate, and the substrate support holder being rotatable on a rotating axis perpendicular to the film forming surface of the substrate, wherein:
 the recording medium records thereon the program for controlling the rotational velocity V of the substrate support holder in a range of 0.016 to 3.5 rps by calculating:
     V·T=N+α   
   
       based on the value of a deposition time T in a range of 1 to 400 seconds and the values of a total whole number of rotations N in a range of 1 to 100 and a fractional number of rotations α in a range of 0.2 to 0.8, which are expressed as:
     X=N +α (where,  N  is a total whole number of rotations which is a positive integer, and α is a fractional number of rotations which is a positive pure decimal)
 
 
       when it is determined that the total number of rotations of the substrate support holder is X during the deposition time T (seconds) of sputtering particles onto the film forming surface of the substrate. 
     
     
         7 . (canceled) 
     
     
         8 . (canceled) 
     
     
         9 . The sputtering apparatus according to  claim 5 , wherein the control unit controls the substrate support holder to rotate it and to maintain at the rotational velocity V, to operate the power supply unit with the shutter in a closed state, and then to operate the shutter to open it. 
     
     
         10 . The sputtering apparatus according to  claim 9 , wherein the control unit controls the power supply unit to stop its power after the deposition time T elapses from the termination of the opening operation of the shutter. 
     
     
         11 . The sputtering apparatus according to  claim 9 , wherein the control unit controls the shutter to start its closing operation after the deposition time T elapses from the termination of the opening operation of the shutter. 
     
     
         12 . The sputtering apparatus according to  claim 6 , wherein the sputtering apparatus is provided with a power supply unit for supplying power to the sputtering cathode, an openable/closable shutter is disposed between the sputtering cathode and the substrate support holder, and the deposition time T is a time when the power is supplied from the power supply unit to the sputtering cathode and the shutter is open. 
     
     
         13 . The sputtering apparatus according to  claim 12 , wherein the program controls to rotate the substrate support holder and to maintain at the rotational velocity V, to operate the power supply unit with the shutter in a closed state, and then to operate the shutter to open it. 
     
     
         14 . The sputtering apparatus according to  claim 13 , wherein the program controls the power supply unit to stop its power after the deposition time T elapses from the termination of the opening operation of the shutter. 
     
     
         15 . The sputtering apparatus according to  claim 13 , wherein the program controls the shutter to start its closing operation after the deposition time T elapses from the termination of the opening operation of the shutter.