Method for fabricating semiconductor device

Abstract

A method for fabricating a semiconductor device includes: the step (a) of forming a vibrating film on a predetermined region of each of a plurality of chips included in a semiconductor wafer; the step (b) of forming, on the semiconductor wafer, an intermediate film containing a sacrifice layer located on the vibrating film of each of the chips; and the step (c) of forming a fixed film on the intermediate film. This method further includes, after the step (c), the step (d) of subjecting the semiconductor wafer to blade dicing to separate the chips, and the step (e) of removing, by etching, the sacrifice layer to provide a cavity between the vibrating film and the fixed film.

1 - 20 . (canceled) 
     
     
         21 . A method for manufacturing a MEMS device, the method comprising steps of:
 (a) forming a first film on a silicon semiconductor wafer including a plurality of chip regions;   (b) forming a second film having a plurality of first holes, said plurality of first holes disposed relative to a first side of the first film;   (c) forming a second hole in the silicon semiconductor wafer in each of the plurality of chip regions, said second hole disposed relative to a second side of the first film;   (d) forming a cavity between the first film and the second film, said cavity located proximate to the second hole in each of the plurality of chip regions;   (e) modifying a crystalline structure of the silicon semiconductor wafer by irradiating a scribe region surrounding each of the plurality of chip regions with a laser; and   (f) dicing the silicon semiconductor wafer along the modified crystalline structure, wherein step (e) is carried out after step (d).   
     
     
         22 . The method for manufacturing a MEMS device according to  claim 21 , wherein in step (e), the crystalline structure of the silicon semiconductor is modified by irradiating with the laser from a side of a surface of the silicon semiconductor wafer on which the second film is formed. 
     
     
         23 . The method for manufacturing a MEMS device according to  claim 22 , further comprising a step of applying a dicing tape to a surface of the silicon semiconductor wafer opposite to the surface formed with the second film. 
     
     
         24 . The method for manufacturing a MEMS device according to  claim 22 , wherein:
 in the step (e), the laser is irradiated to a cutting area in the scribe region of the silicon semiconductor wafer, and   no deposited oxide film is provided in the cutting area to which the laser is irradiated on the surface of the side of the silicon semiconductor wafer on which the second film is formed.   
     
     
         25 . A method for manufacturing a MEMS device, the method comprising steps of:
 (a) providing a silicon semiconductor wafer having thereon:
 a first film on the silicon semiconductor wafer including a plurality of chip regions, 
 a second film with a plurality of first holes, said plurality of first holes disposed relative to a first side of the first film, 
 a second hole in each of the plurality of chip regions of the silicon semiconductor wafer, said second hole disposed relative to a second side of the first film, and 
 a cavity between the first film and the second film, said cavity located proximate to the second hole in each of the plurality of chip regions; 
   (b) modifying a crystalline structure of the silicon semiconductor wafer by irradiating a scribe region surrounding each of the plurality of chip regions with a laser; and   (c) dicing the silicon semiconductor wafer along the modified crystalline structure.   
     
     
         26 . The method for manufacturing a MEMS device according to  claim 25 , wherein in the step (b), the crystalline structure of the silicon semiconductor is modified by irradiating with the laser from a side of a surface of the silicon semiconductor wafer on which the second film is formed. 
     
     
         27 . The method for manufacturing a MEMS device according to  claim 26 , further comprising a step of applying a dicing tape to a surface of the silicon semiconductor wafer opposite to the surface formed with the second film. 
     
     
         28 . The method for manufacturing a MEMS device according to  claim 26 , wherein:
 in the step (b), the laser is irradiated on a cutting area in the scribe region of the silicon semiconductor wafer, and   no deposited oxide film is provided in the cutting area to which the laser is irradiated on the surface of the side of the silicon semiconductor wafer on which the second film is formed.   
     
     
         29 . A method for manufacturing a MEMS device, the method comprising steps of:
 (a) forming a first film on a silicon semiconductor wafer including a plurality of chip regions;   (b) forming a second film having a plurality of first holes, said plurality of first holes disposed relative to a first side of the first film;   (c) forming a second hole in the silicon semiconductor wafer in each of the plurality of chip regions, said second hole disposed relative to a second side of the first film;   (d) forming a cavity between the first film and the second film, said cavity located proximate to the second hole in each of the plurality of chip regions;   (e) modifying a crystalline structure of the silicon semiconductor wafer by irradiating a scribe region surrounding each of the plurality of chip regions with a laser; and   (f) dicing the silicon semiconductor wafer along the modified crystalline structure, wherein:   the step (e) is carried out after the step (d),   in the step (e), the crystalline structure of the silicon semiconductor is modified by irradiating with the laser from a side of a surface of the silicon semiconductor wafer on which the second film is formed,   in the step (e), the laser is irradiated with the second film being exposed,   the first film is disposed between the silicon semiconductor wafer and the second film, and   the plurality of first holes of the second film are disposed just above the second hole of the silicon semiconductor wafer.   
     
     
         30 . The method for manufacturing a MEMS device according to  claim 24 , wherein in the step (e), the laser is irradiated with the second film being exposed. 
     
     
         31 . The method for manufacturing a MEMS device according to  claim 28 , wherein in the step (b), the laser is irradiated with the second film being exposed. 
     
     
         32 . The method for manufacturing a MEMS device according to  claim 22 , wherein:
 in the step (e), the laser is irradiated to a cutting area in the scribe region of the silicon semiconductor wafer with the second film being exposed, and   the first film and the second film are not extended to the cutting area.   
     
     
         33 . The method for manufacturing a MEMS device according to  claim 26 , wherein:
 in the step (b), the laser is irradiated to a cutting area in the scribe region of the silicon semiconductor wafer with the second film being exposed, and   the first film and the second film are not extended to the cutting area.   
     
     
         34 . The method for manufacturing a MEMS device according to  claim 21 , wherein the first film is formed as a vibrating film and the second film is formed as a fixed film. 
     
     
         35 . The method for manufacturing a MEMS device according to  claim 25 , wherein the first film is formed as a vibrating film and the second film is formed as a fixed film. 
     
     
         36 . The method for manufacturing a MEMS device according to  claim 29 , wherein the first film is formed as a vibrating film and the second film is formed as a fixed film. 
     
     
         37 . The method for manufacturing a MEMS device according to  claim 29 , wherein the silicon semiconductor wafer processed by the steps (a) through (d) has no deposited oxide film in a cutting area of a scribe region on the surface of the side of the silicon semiconductor wafer on which the second film is formed. 
     
     
         38 . The method for manufacturing a MEMS device according to  claim 21 , wherein:
 the first film is disposed between the silicon semiconductor wafer and the second film, and   the plurality of first holes of the second film are disposed just above the second hole of the silicon semiconductor wafer.   
     
     
         39 . The method for manufacturing a MEMS device according to  claim 25 , wherein:
 the first film is disposed between the silicon semiconductor wafer and the second film, and   the plurality of first holes of the second film are disposed just above the second hole of the silicon semiconductor wafer.   
     
     
         40 . The method for manufacturing a MEMS device according to  claim 23 , further comprising a step of applying a protecting tape to a surface of the silicon semiconductor wafer, the surface being formed with the second film. 
     
     
         41 . The method for manufacturing a MEMS device according to  claim 40 , wherein said protecting tape is applied prior to irradiating the scribe region with the laser. 
     
     
         42 . The method for manufacturing a MEMS device according to  claim 27 , further comprising a step of applying a protecting tape to a surface of the silicon semiconductor wafer, the surface being formed with the second film. 
     
     
         43 . The method for manufacturing a MEMS device according to  claim 42 , wherein said protecting tape is applied prior to irradiating the scribe region with the laser. 
     
     
         44 . A method for manufacturing a MEMS device, the method comprising steps of:
 (a) forming a first film on a silicon semiconductor wafer including a plurality of chip regions;   (b) forming a second film having a plurality of first holes, said plurality of first holes disposed relative to a first side of the first film;   (c) forming a second hole in the silicon semiconductor wafer in each of the plurality of chip regions, said second hole disposed relative to a second side of the first film;   (d) forming a cavity between the first film and the second film, said cavity located proximate to the second hole in each of the plurality of chip regions; and   (e) providing the silicon semiconductor wafer processed by the steps (a) through (d) for modifying a crystalline structure of the silicon semiconductor wafer and for dicing the silicon semiconductor wafer along the modified crystalline structure.